Solution based synthesis and electronic characterisation of interfacecontrolled amorphous oxidic multilayer films

界面控制非晶氧化多层膜的基于溶液的合成和电子表征

• 批准号: 358048032
• 负责人: Professor Dr. Jörg J. Schneider
• 金额: --
• 依托单位: Fachgebiet Anorganische Chemie
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/358048032?language=en
• 关键词: Solution; based; synthesis; electronic; characterisation

Multilayer systems of indium zinc oxide (IZO, semiconductor) and zirconium dioxide (ZrO2, dielectric) will be accessed by solution processing routes with the aim to study their properties as metal oxide/semiconductor capacity as well as field effect transistors. Synthetically, molecular single source precursor molecules will be employed. These compounds are applicable for thin film deposition by spincoating directly in solutions or by the intermediate conversion to stable dispersion of nanoparticles therefrom. In both cases a subsequent thermal processing is required in order to obtain the functional oxide layers. Appropriate device designs and processing conditions must be found for the fabrication of the MOS capacities and FETs, under which performance parameters as high as possible can be obtained. The successive deposition of the layers should therefore avoid material degradation within the layer sequence and change initial material properties as little as possible. Inherently to the fabrication procedure subsequent processing steps influence the electrical properties of already present layers. Thus, surface adsorbates, defect chemistry and interface effects play a much higher role in film deposition from solution. The electrical measurements enable an assessment of the different fabrication conditions (temperature, heating rate, reaction atmosphere) and device arrangements (film thickness and spatial dimensions). Finally carrier density in the oxidic dielectric, interface charge density as well the difference in the work function between dielectric and semiconductor can be determined. Further propositions should be possible with respect to the conduction mechanism in the dielectric and device break-down. These measurements will be complemented by microscopic and spectroscopic investigations in order to gain a comprehensive picture of the structural and electronic properties. This course of action will allow a target-oriented development of the device architecture and the determination of the process conditions. The entirety of this work will allow conclusions with respect to the functionality of the solution processed multilayer oxide material IZO/ZrO2 as well as to the specific challenges of a more general fabrication and operation of complex devices.

铟锌氧化物(IZO，半导体)和二氧化锆(ZrO2，介电材料)的多层系统将通过溶液处理路线进行访问，目的是研究它们的金属氧化物/半导体容量以及场效应晶体管的特性。综合而言，将采用分子单源前体分子。这些化合物适用于通过直接在溶液中旋涂或通过中间转化为纳米颗粒的稳定分散来沉积薄膜。在这两种情况下，都需要随后的热处理以获得功能氧化物层。为了制造MOS电容和FET，必须找到合适的器件设计和工艺条件，在这种条件下才能获得尽可能高的性能参数。因此，层的连续沉积应避免层序列内的材料降解，并尽可能少地改变初始材料属性。对于制造过程而言，后续处理步骤固有地影响已经存在的层的电特性。因此，表面吸附、缺陷化学和界面效应在溶液沉积薄膜中起着更大的作用。通过电学测量，可以评估不同的制造条件(温度、升温速率、反应气氛)和设备布置(薄膜厚度和空间尺寸)。最后可以确定氧化物介质中的载流子密度、界面电荷密度以及介质和半导体的功函数之差。关于介电击穿和器件击穿中的传导机制，应该可以有进一步的命题。这些测量将得到显微镜和光谱研究的补充，以获得结构和电子性质的全面图景。这一行动方针将允许以目标为导向开发设备架构和确定工艺条件。这项工作的全部内容将使我们能够就溶液处理多层氧化物材料IZO/ZrO2的功能以及更一般的复杂器件的制造和操作的具体挑战得出结论。

项目成果

Solution synthesis and dielectric properties of alumina thin films: understanding the role of the organic additive in film formation.

氧化铝薄膜的溶液合成和介电性能：了解有机添加剂在成膜中的作用

• DOI: 10.1039/d1dt01439k
• 发表时间: 2021
• 期刊: Dalton transactions
• 影响因子: 4
• 作者: R.C. Hoffmann;M.O. Liedke;M. Butterling;A. Wagner;V. Trouillet;J.J. Schneider
• 通讯作者: J.J. Schneider