Ultratin metal oxide films for thin film transistors

用于薄膜晶体管的超锡金属氧化物薄膜

• 批准号: 464639672
• 负责人: Professor Dr. Jörg J. Schneider
• 金额: --
• 依托单位: Fachgebiet Anorganische Chemie
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/464639672?language=en
• 关键词: Ultratin; metal; oxide; films; thin

Multilayer oxide materials have gained increasing importance as active semiconductors in thin film transistor devices. From their performance they outperform amorphous silicon and have thus found widespread applications in various electronic devices. Compared to amorphous oxide structures crystalline oxide heterostructures have certain additional advantages. Whereas the structure of amorphous oxides often depends on various conditions like deposition technique, annealling temperature and oxygen pressure, crystalline oxides are not metastable, their stoichiometry is discrete and they can thus be tuned under controlled synthesis conditions. Moreover, crystalline oxides are not prone to structural relaxation effects as amorphous oxides are and are thus more stable under operational conditions e.g. in a field effect transistor (TFT) device. This proposal deals with multilayered ultrathin crystalline metal oxide films of thicknesses in the range of 5-10 nm serving as semiconductor entity in TFTs. These oxide films will be of relevance for understanding how such heterostructures can be employed to increase performance as well as to ensure long-term reliability of semiconductor thin films. Thus, the proposed work focuses on the elucidation and understanding of the unique characteristics which are inherent to multilayered crystalline metal oxide heterostructures. Such heterostructures could allow for external control of properties through the manipulation of carrier concentration by composition, electrostatic or modulation doping as well as field effect. The aim in particular will be to identify phenomena which are of predominant relevance for heterostructures fabricated by means of atomic layer deposition (ALD). How can the special requirements for a semiconducting heterostructure within a TFT be translated in a chemistry based synthetic approach? To reach these goals multilayered crystalline oxide structures consisting of In2O3/SnO2/ZnO or HfO2/In2O3/ZnO stacks will be synthesized. The resulting TFTs will be characterized by a combination of electrical measurements as well as spectroscopic and microscopic techniques. The interpretation of the electrical characterization will be supported by spectroscopic methods which are capable to probe complex heterostructures. They will provide particular information about the nature of the buried interfaces within a heterostructured stack and the degree of charge transfer between the different metal oxide layers. In this way a comprehensive characterization of the multi-layered metal oxide heterostructures will be possible. Since these material systems possess a high degree of flexibility, we expect new discoveries and an in depth understanding in this field of research.

多层氧化物材料作为薄膜晶体管器件中的有源半导体已经获得了越来越多的重要性。从性能来看，它们的性能优于非晶硅，因此在各种电子设备中得到了广泛的应用。与非晶氧化物结构相比，晶体氧化物异质结构具有某些额外的优点。然而，非晶氧化物的结构通常取决于各种条件，如沉积技术、退火温度和氧气压力，结晶氧化物不是亚稳态的，它们的化学计量是离散的，因此它们可以在受控的合成条件下进行调节。此外，结晶氧化物不像非晶氧化物那样易于发生结构弛豫效应，因此在例如场效应晶体管（TFT）器件中的操作条件下更稳定。该建议涉及厚度在5-10 nm范围内的多层半导体晶体金属氧化物膜，其用作TFT中的半导体实体。这些氧化物膜将是相关的理解如何可以采用这样的异质结构，以提高性能，以及确保半导体薄膜的长期可靠性。因此，拟议的工作集中在阐明和理解的独特特性，这是固有的多层晶体金属氧化物异质结构。这样的异质结构可以允许通过由组合物、静电或调制掺杂以及场效应操纵载流子浓度来外部控制性质。特别是，其目的将是确定的现象，这是主要的相关性，通过原子层沉积（ALD）制造的异质结构。如何将TFT内半导体异质结构的特殊要求转化为基于化学的合成方法？为了达到这些目标，将合成由In 2 O3/SnO 2/ZnO或HfO 2/In 2 O3/ZnO堆叠组成的多层晶体氧化物结构。所得到的TFT将通过电测量以及光谱和显微镜技术的组合来表征。的解释的电特性将支持光谱方法，能够探测复杂的异质结构。它们将提供关于异质结构叠层内的掩埋界面的性质和不同金属氧化物层之间的电荷转移程度的特定信息。以这种方式，多层金属氧化物异质结构的全面表征将是可能的。由于这些材料系统具有高度的灵活性，我们期待在这一研究领域有新的发现和深入的了解。