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Computer simulation study of rare events in magnetic nanosystems: error rates and energy barriers in STT-MRAM cells

磁性纳米系统中罕见事件的计算机模拟研究：STT-MRAM 单元中的错误率和能垒

基本信息

批准号：
389034432
负责人：
Privatdozent Dr. Dmitry Berkov
金额：
--
依托单位：
General Numerics Research Lab e.V.
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2017
资助国家：
德国
起止时间：
2016-12-31 至 2020-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/389034432?language=en
关键词：
Computer simulation study rare events

项目摘要

The main goal of the project is the theoretical study using computer simulations (with experimental support) of rare events in physical systems with many metastable states, taking as an example an emerging generation of novel computer memory: spin-transfer-torque magnetic random access memory (STT-MRAM). According to this general task, partial goals of this proposal are: (1) To achieve thorough physical understanding of switching processes in STT-MRAM cells (using numerical studies and supporting experimental measurements) with the purpose to identify typical switching scenarios and to predict the dependence of the switching current on the MRAM cell parameters and on the environmental conditions.(2) To calculate Write and Read Error Rates of STT-MRAM cells using full-scale massively parallel micromagnetic simulations of MRAM cells at finite temperatures (and to verify these calculations by large-scale experiments on MRAM cell arrays) in a broad range of temperatures and times.(3) To predict the information life time in STT-MRAM cells using reliable numerical methods (to be developed in frames of this project) for the evaluation of energy barriers.In order to achieve these partial goals, the theory group of General Numerics Research Lab intends to develop:(i) new GPU-based numerical methods for massively parallel Langevin-dynamics modeling of switching processes in multilayer nanoelements, and (ii) advanced methods for the direct determination of energy barriers in systems with multiply metastable states, which would also account for the possibility of a transition between two given states via several intermediate local energy minimaExpected project results should greatly improve our understanding of the long-time magnetization dynamics in magnetic systems with many metastable states in general, and obtain deep physical insights into the switching processes in the new generation of magnetic memory (STT-MRAM) in particular.

该项目的主要目标是利用计算机模拟（在实验支持下）对具有许多亚稳态的物理系统中的罕见事件进行理论研究，以新一代新型计算机存储器：自旋转移力矩磁性随机存取存储器（STT-MRAM）为例。根据该总体任务，该提议的部分目标是：（1）实现对STT-MRAM单元中的切换过程的彻底物理理解（使用数值研究和支持实验测量），其目的是识别典型的切换场景并预测切换电流对MRAM单元参数和环境条件的依赖性。(2)使用有限温度下MRAM单元的全尺寸大规模并行微磁模拟计算STT-MRAM单元的写入和读取错误率（并通过MRAM单元阵列的大规模实验验证这些计算）。(3)用可靠的数值方法预测STT-MRAM单元的信息寿命（将在本项目框架内开发）用于评估能量障碍。为了实现这些部分目标，通用数值研究室理论组打算开发：（i）用于多层纳米元件中开关过程的大规模并行Langevin动力学建模的基于GPU的新数值方法，以及（ii）用于直接确定具有多个亚稳态的系统中的能量势垒的先进方法，这也将占两个给定的状态之间的过渡通过几个中间本地能量minimaExpected项目的结果应该大大提高我们的理解在磁性系统中的长期磁化动力学与许多亚稳态一般，并获得深入的物理见解的切换过程中的新一代磁存储器（STT-MRAM）特别。