Zinc magnesium oxynitrides

氮氧化锌镁

• 批准号: 391011127
• 负责人: Professor Dr. Marius Grundmann
• 金额: --
• 依托单位: Abteilung Halbleiterphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2021-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/391011127?language=en
• 关键词: Zinc; magnesium; oxynitrides

Metal oxynitrides have been proposed as an alternative material system in the field of thin film transistors. The most common materials addressing these applications, besides amorphous Si, are multi-cation compounds exhibiting low mobilities (in the order of 1-10 cm2 V-1 s-1) and are often amorphous. On the opposite side in terms of mobility and crystalline quality, ZnO-based high-electron mobility transistors have enabled the first observation of the fractional quantum Hall effect in a material other than Si, III-V materials or graphene. In this project we aim to bridge the gap between these two universes by analyzing two multianion families, namely oxynitrides: ZnNO and MgNO. In ZONE we propose to grow (Zn,Mg)(N,O) thin films by magnetron sputtering and molecular beam epitaxy, to study their physical properties (poorly known or even unknown) and to fabricate basic electronic devices, in particular HEMTs, metal-semiconductor and junction field effect transistors (MESFETs and JFETs).

金属氮氧化物已被提出作为薄膜晶体管领域中的替代材料系统。除了非晶Si之外，解决这些应用的最常见的材料是表现出低迁移率（在1-10 cm 2 V-1 s-1的量级）的多阳离子化合物，并且通常是非晶的。在迁移率和晶体质量方面，ZnO基高电子迁移率晶体管首次在Si、III-V族材料或石墨烯以外的材料中观察到了分数量子霍尔效应。在这个项目中，我们的目标是弥合这两个宇宙之间的差距通过分析两个多阴离子的家庭，即氮氧化物：ZnO和MgNO。在ZONE中，我们建议通过磁控溅射和分子束外延来生长（Zn，Mg）（N，O）薄膜，研究它们的物理性质（知之甚少甚至未知），并制造基本的电子器件，特别是HEMT，金属半导体和结型场效应晶体管（MESFFET和JFET）。