Amorphous p-type spinel thin films

非晶p型尖晶石薄膜

• 批准号: 248402426
• 负责人: Professor Dr. Marius Grundmann
• 金额: --
• 依托单位: Abteilung Halbleiterphysik
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2014
• 资助国家: 德国
• 起止时间: 2013-12-31 至 2017-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/248402426?language=en
• 关键词: Amorphous; type; spinel; thin; films

A new type of p-conducting semiconductor will be investigated which relies on disorder induced doping effects. Such doping has been prediced theoretically for certain AB2O4 spinels in their crystalline form. In particular fort he amorphous phase we expect such disorder effect to be enhanced. Our first results for amorphous ZnCo2O4 and heterodiodes with n-ZnO make this idea seem worthwhile. The electrical properties of selected spinels will be investigated with regard to crystallinity, stoichiometry and doping. Thus a new class of p-type oxide semiconductors will be established.

研究了一种新型的p型导电半导体，它依赖于无序诱导掺杂效应。这种掺杂已经在理论上预测了某些晶体形式的AB 2 O 4尖晶石。特别是对于非晶相，我们期望这种无序效应得到增强。我们的第一个结果为非晶ZnCo 2 O 4和异质结与n-ZnO使这个想法似乎是值得的。选定的尖晶石的电性能将被调查方面的结晶度，化学计量和掺杂。因此，将建立一类新的p型氧化物半导体。

项目成果

Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films

• DOI: 10.1002/pssa.201700210
• 发表时间: 2017-06
• 期刊: physica status solidi (a)
• 作者: P. Schlupp;H. von Wenckstern;M. Grundmann

All Amorphous Oxide Bipolar Heterojunction Diodes from Abundant Metals

• DOI: 10.1002/aelm.201400023
• 发表时间: 2015-02
• 期刊: Advanced Electronic Materials
• 影响因子: 6.2
• 作者: P. Schlupp;F. Schein;H. von Wenckstern;M. Grundmann

Ring Oscillators Based on ZnO Channel JFETs and MESFETs

• DOI: 10.1002/aelm.201500431
• 发表时间: 2016-07
• 期刊: Advanced Electronic Materials
• 影响因子: 6.2
• 作者: F. Klüpfel;H. von Wenckstern;M. Grundmann

All-Oxide Inverters Based on ZnO Channel JFETs With Amorphous ZnCo2O4 Gates

• DOI: 10.1109/ted.2015.2493361
• 发表时间: 2015-11
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: F. J. Klupfel;A. Holtz;F. Schein;H. von Wenckstern;M. Grundmann

Vital Role of Oxygen for the Formation of Highly Rectifying Schottky Barrier Diodes on Amorphous Zinc-Tin-Oxide with Various Cation Compositions.

• DOI: 10.1021/acsami.7b06836
• 发表时间: 2017-07
• 期刊: ACS applied materials & interfaces
• 影响因子: 9.5
• 作者: S. Bitter;P. Schlupp;H. von Wenckstern;M. Grundmann