Flexible analogue and digital circuit blocks in amorphous metal oxides

基于在第一个资助期内开发的电路构建模块，应实现具有在例如13.56 MHz的ISM频带频率下操作的无线通信接口的功能电路。此外，还应开发适当的钝化/包装技术，以实现真实的日常使用的长期稳定性和机械耐用性。有源电子元件依赖于在室温下通过长距离溅射制备的锌锡氧化物薄膜。作为场效应晶体管技术，将实现MESFFET和JFET。在0.3微米范围内的图案尺寸的情况下，特征尺寸将减小约十倍。此外，将在配备有O/N等离子体源的溅射系统中进行CVD的沉积，而不是迄今为止使用的等离子体增强化学气相沉积。最高加工温度不超过100°C。钝化层也将通过长距离溅射沉积，以保持功能电路的性能。此外，将研究整个电路的封装/层压。

Based on the circuit building blocks developed in the first funding period, functional circuits with wireless communication interface operating at ISM band frequency of e.g. 13.56 MHz shall be realized. Also, an adequate passivation/packaging technology enabling long-term stability and mechanical robustness for real world daily usage shall be developed. The active electronic components rely on zinc-tin oxide thin films fabricated at room temperature by long-throw sputtering. As field-effect transistor technology MESFETs and JFETs will be implemented. Feature sizes will be reduced by about a factor of ten with pattern sizes in the 0.3 micrometer range. Further, the deposition of dielectrics will be performed in the sputtering system equipped with an O/N plasma source instead of the plasma-enhanced chemical vapor deposition used so far. Highest processing temperatures will not exceed 100°C. Passivation layers will be as well deposited by long-throw sputtering, preserving the performance of the functional circuits. Further, encapsulation/lamination of entire circuits will be investigated.