Flexible analogue and digital circuit blocks in amorphous metal oxides

在第一期资助期内开发的电路模块基础上，将实现在ISM频段频率（例如13.56 MHz）下工作的无线通信接口功能电路。此外，应开发一种适当的钝化/包装技术，使长期稳定性和机械稳健性适用于现实世界的日常使用。有源电子元件依赖于在室温下用长溅射法制备的锌锡氧化物薄膜。作为场效应晶体管技术，mesfet和jfet将被实现。在0.3微米范围内，特征尺寸将减少大约十倍的图案尺寸。此外，电介质的沉积将在配备O/N等离子体源的溅射系统中进行，而不是目前使用的等离子体增强化学气相沉积。最高加工温度不超过100°C。钝化层也将通过长溅射沉积，以保持功能电路的性能。此外，整个电路的封装/层压将被研究。

Based on the circuit building blocks developed in the first funding period, functional circuits with wireless communication interface operating at ISM band frequency of e.g. 13.56 MHz shall be realized. Also, an adequate passivation/packaging technology enabling long-term stability and mechanical robustness for real world daily usage shall be developed. The active electronic components rely on zinc-tin oxide thin films fabricated at room temperature by long-throw sputtering. As field-effect transistor technology MESFETs and JFETs will be implemented. Feature sizes will be reduced by about a factor of ten with pattern sizes in the 0.3 micrometer range. Further, the deposition of dielectrics will be performed in the sputtering system equipped with an O/N plasma source instead of the plasma-enhanced chemical vapor deposition used so far. Highest processing temperatures will not exceed 100°C. Passivation layers will be as well deposited by long-throw sputtering, preserving the performance of the functional circuits. Further, encapsulation/lamination of entire circuits will be investigated.