Preparation of Oligomer nanowires composed of hetero semiconductor nanocrystals

为了实现界面上的超快速电荷分离，研究了由半导体纳米晶体组成的低聚物纳米线的制备和表征。在各种半导体纳米晶体中，对由CdS、ZnS、ZnO、CdT和CdSe组成的半导体纳米晶体的表面保护分子如胺、酰胺和硫醇进行了研究。经过系统研究，成功合成了CdS/CdTe和CdSe/CdTe组成的低聚纳米线，并对其界面上的超快电荷分离进行了研究。

In expecting ultra-fast charge separation at the interfaces, preparation and characterization of oligomer nanowires composed of semiconductor nano-crystals were studied. Among various semiconductor nano-crystals, those composed of CdS, ZnS, ZnO, CdT and CdSe were studied regarding their surface protecting molecules such as amines, amides and thiols. After systematic study, oligomer nanowires composed of CdS/CdTe and CdSe/CdTe were successfully synthesized and ultrafast charge separation at the interfaces was investigated.