Interface doping on organic thin film transistors exploring spin related phenomena
Interface doping on organic thin film transistors exploring spin related phenomena
批准号:
24655163
负责人:
FUJIKAWA Yasunori
金额:
$2.58万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012-04-01 至 2014-03-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
An organic growth system with a photoelectron emission microscope has been attached to a four-probe scanning tunneling microscope, and an electron beam controller has been installed to the photoelectron emission microscope to improve the performance. Interface formation process between silicon oxide and organic material has been investigated in detail, finding some novel knowledge on nucleation processes, which is a key factor to improve the organic device property.
期刊论文(12)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
In-situ transport measurement of kinetically controlled Bi atomic layers
动力学控制 Bi 原子层的原位传输测量
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[Y. Fujikawa, E. Saitoh]
通讯作者:
E. Saitoh
DOI:
10.1103/physrevb.85.144408
发表时间:
2012-04-12
期刊:
PHYSICAL REVIEW B
影响因子:
3.7
作者:
[Nakayama, H., Ando, K., Saitoh, E.]
通讯作者:
Saitoh, E.
DOI:
10.1143/apex.5.023002
发表时间:
2012-01
期刊:
Applied Physics Express
影响因子:
2.3
作者:
[H. Nakayama;Jianting Ye;Takashi Ohtani;Y. Fujikawa;K. Ando;Y. Iwasa;E. Saitoh]
通讯作者:
H. Nakayama;Jianting Ye;Takashi Ohtani;Y. Fujikawa;K. Ando;Y. Iwasa;E. Saitoh
DOI:
10.1063/1.4819460
发表时间:
2013-08-26
期刊:
APPLIED PHYSICS LETTERS
影响因子:
4
作者:
[Qiu, Z., Ando, K., Saitoh, E.]
通讯作者:
Saitoh, E.
DOI:
--
发表时间:
2013
期刊:
影响因子:
--
作者:
[Y. Fujikawa, E. Saitoh]
通讯作者:
E. Saitoh
共 9 条
Structural control and property exploration on organic complex stacks via combined microscopic observations
-
批准号:23310062
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$1.25万
-
财政年份:2011
-
负责人:FUJIKAWA Yasunori
-
依托单位:
Control of structure and property in new low dimensional structures on Si nanomembrane
-
批准号:19206005
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$27.62万
-
财政年份:2007
-
负责人:FUJIKAWA Yasunori
-
依托单位:
Controlled fabrication of quantum dots and nanostructures by controlling high-index surfaces of group IV semiconductors
-
批准号:15310081
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.37万
-
财政年份:2003
-
负责人:FUJIKAWA Yasunori
-
依托单位:
海外基金