Quantitative Evaluation of the Crystallinity of Grain Boundaries in Nano Scale

纳米尺度晶界结晶度的定量评价

• 批准号: 24656077
• 负责人: MIURA Hideo
• 金额: $ 2.5万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-24656077/
• 关键词: 結晶粒界品質; 材料設計; 物性評価; 電子線回折; 信頼性; 結晶粒界; 薄膜デバイス; めっき銅薄膜配線; 原子拡散; 劣化損傷; 構造・機能材料; マイクロ・ナノデバイス; 電気・電子材料; 電子デバイス・機器; 電子顕微鏡

A novel evaluation method of the crystallinity of grain boundaries was proposed by analyzing the quality of Kikuchi lines obtained from the conventional EBSD analysis. This method can evaluate the porous and brittle grain boundaries by IQ (Image Quality) and CI (Confidence Index). Both IQ and CI values are the parameters which are calculated from the observed result of the Kikuchi pattern obtained from the area where electron beams penetrate during EBSD analysis. It was found that the local areas with low IQ value and low CI value correspond to porous grain boundaries. The change of these values corresponded to the changes of mechanical and electrical properties of thin films. Therefore, the quality of grain boundaries can be evaluated by using the proposed combination of the IQ and CI values clearly, and thus, this method is effective for evaluating the crystallinity of grain boundaries and thus, the change of mechanical and electrical properties of the polycrystalline thin films.

通过分析EBSD分析中获得的菊池线的质量，提出了一种评价晶界结晶度的新方法。该方法可以通过图像质量（IQ）和置信度（CI）来评价多孔和脆性晶界。IQ值和CI值都是根据从EBSD分析期间电子束穿透的区域获得的菊池图案的观察结果计算的参数。结果表明，低IQ值和低CI值的局部区域对应于多孔晶界。这些值的变化对应于薄膜的力学和电学性能的变化。因此，晶界的质量可以通过使用IQ和CI值的组合来评估，因此，该方法对于评估晶界的结晶度以及多晶薄膜的机械和电性能的变化是有效的。

项目成果

Micro-Texture and Physical Properties of the Cold-sprayed Copper Deposit

冷喷涂铜镀层的显微组织和物理性能

• 发表时间: 2012
• 作者: Rittinon Pornvitoo;Osamu Asai;Ken Suzuki;Hideo Miura;範伝紅;Osamu Asai;Ryosuke Furuya;Yusuke Watanabe;Hideo Miura;Hideo Miura;Hideo Miura;Hideo Miura;Yusuke Watanabe
• 通讯作者: Yusuke Watanabe

Effect of Microtexture in Electroplated Copper Thin Films on Their Thermal Conductivity

电镀铜薄膜的微观织构对其热导率的影响

• 作者: Rittinon Pornvitoo;Osamu Asai;Ken Suzuki;Hideo Miura
• 通讯作者: Hideo Miura

Improvement of the Reliability of TSV Interconnections by Controlling Crystallinity of Electroplated Copper Thin Films”, ECTC2013

通过控制电镀铜薄膜的结晶度提高 TSV 互连的可靠性”，ECTC2013

• 发表时间: 2013
• 作者: Ryosuke Furuya;Chuanhong Fan;Osamu Asai;Ken Suzuki;and Hideo
• 通讯作者: and Hideo

Micro-Texture and Physical Properties of the Cold-sprayed Copper Deposit

冷喷涂铜镀层的显微组织和物理性能

• 发表时间: 2012
• 作者: Rittinon Pornvitoo;Osamu Asai;Ken Suzuki;Hideo Miura;範伝紅;Osamu Asai;Ryosuke Furuya;Yusuke Watanabe
• 通讯作者: Yusuke Watanabe

Evaluation of the Crystallographic Quality of Electroplated Copper Thin-Film Interconnections Embedded in TSV Structures

嵌入 TSV 结构中的电镀铜薄膜互连的晶体质量评估

• 发表时间: 2012
• 作者: Rittinon Pornvitoo;Osamu Asai;Ken Suzuki;Hideo Miura;範伝紅;Osamu Asai;Ryosuke Furuya
• 通讯作者: Ryosuke Furuya