Printable organic-inorganic hybrid semiconductors for high-mobility and short-channel thin-film transistors

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The device characteristic in which mobility exceeds 1 cm^2/Vs at the short channel length about 5 \mu m is necessary for practical use of organic thin film transistors. In thin film transistors with top-gate configuration and with channel length of 5 \mu m fabricated using a newly developed organic semiconductor, we have obtained the highest field effect mobility of 1.5 cm^2/Vs in the linear regime of the top-gate transistors. We stress that we have achieved the target value for the field-effect mobility and thereby we have opened new era for the application of organic thin-film transistors