New functionality of organic-inorganic hybrids with chemically modified nanoparticles and development of innovative devices based on the hybrids

薄膜晶体管是用表面经过化学修饰的有机半导体、二氧化硅纳米颗粒的混合物制成的。由于薄膜晶体管在疏水表面的涂覆性和有机半导体结晶度的提高，薄膜晶体管表现出优异的电学特性。新的薄膜晶体管生产工艺已经建立起来。有机-无机杂化体异质结太阳能电池也被制备出来，与传统的有机太阳能电池相比，该杂化体异质结太阳能电池的器件寿命大大提高。用阻抗谱法测定了薄膜晶体管的界面态密度，结果表明，有机-无机杂化栅极绝缘体/有机半导体界面处的态密度极低，表明该杂化材料同样适用于薄膜晶体管的栅极绝缘体。

Thin film transistors have been fabricated using a mixture of organic semiconductors silica nanoparticles whose surfaces are chemically modified. The thin film transistors exhibit excellent electrical characteristics because of improved coatability on hydrophobic surfaces and improved crystallinity of organic semiconductors. New thin film transistor production processes have been established from the findings. Organic-inorganic hybrid bulk heterojunction solar cells have also been fabricated, and the device lifetime of the hybrid solar cells is found to be much improved in comparison with conventional organic solar cells. The interface density of states of the thin film transistor has been determined with impedance spectroscopy, and it is demonstrated that the density of states at the organic-inorganic hybrid gate insulator/organic semiconductor interface is extremely low, indicating that the hybrid materials are suitable to a gate insulator for thin film transistors as well.