Improvement of mobility for CVD graphene by removing catalytic metal

CVD生长石墨烯是合成石墨烯的一种简单有效的方法。本研究以云母(001)为衬底，替代氧化铝和氧化镁制备单晶石墨烯。在云母上沉积了厚度为800 nm的铜。经过1000℃的氢气退火后，表面粗糙度降至0.5 nm(RMS)，这表明石墨烯的生长表面非常光滑。在精确控制H2/Ar气体流量的基础上，可以在铜上生长出高质量的石墨烯。拉曼光谱证实了这一点。被测器件的迁移率为~4500 cm2/vs。

CVD growth of graphene is simple and effective way for graphene synthesis. In this study, mica(001) substrate was used to obtain the single crystal graphene, instead of Al2O3 and MgO. The Cu deposition of 800 nm in thickness was carried out on mica. After the H2 annealing at 1000 C, the surface roughness was reduced to 0.5 nm (RMS), which indicates very smooth surface for graphene growth. Based on the precise control of H2/Ar gas flow, high quality graphene could be grown on Cu. This was confirmed by Raman. The mobility of measured device was ~4500 cm2/Vs.