Improvement of mobility for CVD graphene by removing catalytic metal

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CVD growth of graphene is simple and effective way for graphene synthesis. In this study, mica(001) substrate was used to obtain the single crystal graphene, instead of Al2O3 and MgO. The Cu deposition of 800 nm in thickness was carried out on mica. After the H2 annealing at 1000 C, the surface roughness was reduced to 0.5 nm (RMS), which indicates very smooth surface for graphene growth. Based on the precise control of H2/Ar gas flow, high quality graphene could be grown on Cu. This was confirmed by Raman. The mobility of measured device was ~4500 cm2/Vs.