Heterostructures of 2D Materials and Organic Semiconductor Nanolayers

该项目将把2D材料与新开发的有机半导体纳米层相结合，以创造用于电子和光电系统的货车德瓦尔斯异质结构。我们提出了一种新的方法，将有机半导体（OSC）的纳米层（5至10 nm）与无机2D材料集成在一起，这可以通过利用这两种材料的特性来显著促进技术进步。对于vdWh的实际应用，需要大规模制备异质结构而不损害其结晶度和界面质量。到目前为止，主要的挑战在于难以在2D晶体上大面积制备高质量、有序和均匀的CNOSC层。为了应对这些挑战，该项目将利用新方法用2D材料制造vdWh，同时保持其结构完整性和高界面质量。我们将开发5至10 nm的OSC，其机械稳定且可通过交联和层转移方法转移。具体来说，我们将生产OSC和原子薄CVD生长的过渡金属二硫属化物（TMDC）的pn结，在横向和垂直配置的设备，如二极管和晶体管的演示。具有p型和n型载流子（并五苯、DNTT和表吲哚酮）的OSC材料的广泛选择的使用将允许我们研究具有2D TMDC材料（MoS2、WSe2）的I型和II型异质结。pn结将与其他2D材料集成，以形成具有改善的器件特性的所有2D vdWhs。CVD石墨烯将用作OSC和TMDC的接触材料，其中能带对准和界面电阻可以通过调节肖特基势垒来控制栅极电压。此外，我们将整合最近开发的碳纳米膜（CNM）作为vdWh设备中的碳纳米管。我们将利用我们在生长，纳米纤维，光谱学，光学和电学传输方法方面的尖端专业知识来了解vdWh异质界面并开发新型电子和光电器件。对于vdWhs的基本理解，我们计划使用我们的经验（基于同步加速器）的光电子能谱表征的电子结构，电传输测量了解电荷传输特性，光电流光谱测量的光学表征。这些提出的vdWh电子和光电器件将使我们能够利用2D材料和OSC提供的优势：优异的电学和光学性能，灵活性，大面积和低成本生产，原子级平坦界面，对结的出色栅极控制以及可扩展性的巨大潜力。

This project will integrate 2D materials with newly developed nanolayers of organic semiconductors to create van der Waals heterostructures for applications in electronic and optoelectronic systems. We propose a new approach to integrate nanolayers (5 to10 nm) of organic semiconductors (OSC) with inorganic 2D materials, which could contribute significantly to technological advancement by exploiting the properties of both materials. For practical application of vdWh, large scale preparation of heterostructures without compromising their crystallinity and interface quality is required. So far, the primary challenges lie in the difficulty of preparation of high quality, ordered and uniform ultrathin OSC layers on top of 2D crystals over a large area. To address these challenges, this project will utilize novel methods to fabricate vdWh with 2D materials while retaining their structural integrity and high interface quality. We will develop 5 to 10 nm of OSC that are mechanically stable and transferable by crosslinking and layer transfer methods. Specifically, we will produce pn junctions of OSC and atomically thin CVD grown transition metal dichalcogenides (TMDCs), in a lateral and vertical configuration for demonstration of devices such as diodes and transistors. The employment of a broad choice of OSC materials with p and n type carriers (pentacene, DNTT and epindolidione) will allow us to investigate both type I and type II heterojunctions with 2D TMDC materials (MoS2, WSe2). The pn junctions will be integrated with other 2D materials to form all 2D vdWhs with improved device characteristics. CVD graphene will be used as contact materials to OSC and TMDC, where the band alignment and interface resistance can be controlled with gate voltage by tuning the Schottky barrier. Furthermore, we will integrate the recently developed carbon nanomembranes (CNM) as dielectrics in the vdWh devices. We will utilize our cutting edge expertise in growth, nanofabrication, spectroscopy, optical and electrical transport methods to understand the vdWh heterointerfaces and to develop novel electronic and optoelectronic devices. For basic understanding of vdWhs we plan to use our experience in (synchrotron based) photoemission spectroscopy for characterization of electronic structure, electrical transport measurements for understanding the charge transport properties, optical characterization by photocurrent spectroscopy measurements. These proposed vdWh electronic and optoelectronic devices will allow us to exploit the advantages offered by both 2D materials and OSC: Excellent electrical and optical properties, flexibility, large area and low cost production, atomically flat interfaces, excellent gate control over the junction and a great potential for scalability.