Application ot blue light-emeitting diods of zns films unsing new epitaxial growth methof

我们在房间温度下开发了一个新的金属有机化学-bopur-deposition的基本增益系统（MOCVD），以制备具有高抵抗力（高于10 ohn.cm）但低抵抗力（低于10 ohn.cm）。This system supplies dimethlzine （DMZn） diluted in He and H_2 S gases at low pressure of about 0. 3 Torr as source mateerials。使用的Zns电影，如果不使用霍尔效应和光发射测量的影响，则产生了两种蓝光发射二极管的类型;（1） Ht MOCVD Zns fdilms作为绝缘子larte.Am MIS结构由Au-nMOCVD层-n-bulk Zns组成：我的水晶被制造在一个向前的偏见条件下，Luminesecnce发射带周围2.7 ev，在Foom Remperature Aperst，而外部Quantum eficincey估计约为0.1%，当绝缘层thixkens为500安培。“Wtis Decreasign the Thickness， the efficiency，大大提高了。”（ii）MOCVD绝缘子和低耐药性活性锌：I MOVCD分层低耐药性锌。I films orto （100） GaSa substrManagement were obtaind using HI gas at 300 C。这个骗子被发现在2.65岁的生命中一个强大的蓝色发射带。与（i）相同，由MOVCD Zns在低抵抗力ZNS上放置绝缘层：我的电影，MIS二极管制造和显示在房间内的前向偏置条件下的发射。

We have developed a new epitaxial gorwth system of metalorganic chemical-bopur-deposition (MOCVD) for the prepatation of Zns thin films with either high-resistivity (above 10 ohn.cm) ot low-resistivity ( below 10 och.cm) at room temprature by doping I. This system supplies dimethlzine (DMZn) diluted in He and H_2 S gases at low pressure of about 0.3 Torr as source mateerials. The obtained Zns films with and withoutr Im impurity were characterised by the Hall ecect and photoluminescence measutements The two types of blue light-emitting diodes have been fabricated;(1) Ht MOCVD Zns fdilms as an insulator larte.Am MIS structure consisting of Au- nMOCVD layer-n-bulk Zns:I crystal was fabvricted under a forward bias condition, the luminesecnce emission band around 2.7 ev at foom remperature apperst and is external qugntum eficincey was estimated to be about 0.1 %, when the insulator layer thixkenss was 500 A. wtith decreasign the thickness, the effieciency was slightly improved.(ii) the MOCVD insullator andl low-resistivity active Zns:I MOVCD layedLow-resistrivity Znd.: I films orto (100) GaSa substrtes were obtaind using HI gas at 300 ゜C. This leyer exnibited a strong blue enission band in the vivinity of 2.65 ev. As same as (i), by depositing the insulator layer of the MOVCD Zns onto low-resistrivity ZnS:I films, the MIS diode was fabricated and exhibited ble emission under a forward bias condition at room remperature.