Heteroepitaxial Nucleation and Growth of Diamond

金刚石的异质外延成核与生长

• 批准号: 07044312
• 负责人: HIRAKI Akio
• 金额: --
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for International Scientific Research.
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 无数据
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07044312/
• 关键词: diamond thin film; heteroepitaxial growth; semiconductor material; electron emitter device; bias enhanced nucleation; nanocrystal seeding; silicon substrate; electrode

Prof. Hiraki and Dr. Hatta visited Korea from Oct. 16 to 21, 1995. They visited ETRI to discuss about the Korean project aiming at flat display panel of diamond. Because some interesting results about electron emission from diamond had been already reported by Hiraki's group in Osaka university, some collaborations were proposed from both country. After that, they moved to Seoul to attend the 3rd IUMRS International Conference in Asia, in which some papers about diamond and its related materials were presented. They went to Inchon city to visit Inha university. Basing on the recent results in Korea and Japan, they discussed with Prof. Lee about their collaboration project in this fiscal year.From March 1 to 5, 1996, Prof. Hiraki, Prof. Ito, Dr. Hatta, and Dr. Mori visited Korea with Prof. Murakami and Prof. Koide of Kyoto university. They visited Cheju National university, where one of the biggest project for diamond electronics device was starting. The researchers in Cheju National University were very interested in the diamond growth at low temperature by ECR plasma CVD method which would be an important technique for their goal of SOD device. After that, they moved to Inchon to visit Inha university for discussion about experimental results obtained in the research project in this fiscal year. Prof. Murakami and Prof. Koide were also invited to have presentations about their recent works on metal electorodes on diamond.In Osaka university, studies on the following topics were carried out ; low temperature synthesis of diamond films with nanocrystal seeding, bias enhanced nucleation by microwave plasma CVD, charactrization of highly oriented diamond films, high speed deposition of diamond at low temperature by pulse modulated plasma, high speed deposition of highly oriented diamond films on silicon by DC arc plasma jet CVD, and nucleation of diamond on silicon over large area by ECR plasma CVD.

Hiraki教授和Hatta博士于1995年10月16日至21日访问了韩国。他们访问ETRI，讨论针对钻石平板显示面板的韩国项目。由于大坂大学Hiraki小组已经报道了一些关于金刚石电子发射的有趣结果，因此两国提出了一些合作。之后，他们前往首尔参加在亚洲举行的第三届IUMRS国际会议，会上发表了一些关于钻石及其相关材料的论文。他们去仁川市参观仁荷大学。1996年3月1日至5日，Hiraki教授、Ito教授、Hatta博士和Mori博士与京都大学的Murakami教授和Koide教授一起访问了韩国。他们参观了济州国立大学，那里是钻石电子设备最大的项目之一。济州国立大学的研究人员对通过ECR等离子体CVD方法在低温下生长金刚石非常感兴趣，这将是他们实现SOD器件目标的重要技术。之后，他们前往仁川访问仁荷大学，讨论本财政年度研究项目的实验结果。村上教授和小出教授也应邀介绍了他们最近在金刚石上的金属电极方面的工作。在大坂大学，进行了以下课题的研究：金刚石薄膜的低温合成，微波等离子体CVD偏压增强成核，高取向金刚石薄膜的表征，脉冲调制等离子体低温高速沉积金刚石，用直流电弧等离子体喷射CVD法在硅上高速沉积高度取向的金刚石薄膜，用ECR等离子体CVD法在硅上大面积成核金刚石。

项目成果

H.M.Jeon, C.M.Lee, A.Hatta, T.Ito, T.Sasaki and A.Hiraki: "Diamond nucleation on Si substrate over large area by ECR plasma CVD" Diamond Films and Technol.(submitted).

H.M.Jeon、C.M.Lee、A.Hatta、T.Ito、T.Sasaki 和 A.Hiraki：“通过 ECR 等离子体 CVD 在大面积 Si 衬底上成核”金刚石薄膜和技术（已提交）。

Fabrication of diamond films at low temperature by pulse modulated magnetoactive microwave plasma CVD: "A.Hatta,H.Suzuki,K.Kadota,H.Makita,T.Ito and A.Hiraki" Plasma Sources Sci.and Technol.,. 5(in press). (1996)

通过脉冲调制磁活性微波等离子体 CVD 低温制备金刚石薄膜：“A.Hatta、H.Suzuki、K.Kadota、H.Makita、T.Ito 和 A.Hiraki” Plasma Sources Sci.and Technol.,。