Fabrication of High-Power Blue Emission Diveces Using Chemical Vapor Deposition Diamond
Fabrication of High-Power Blue Emission Diveces Using Chemical Vapor Deposition Diamond
批准号:
63850008
负责人:
HIRAKI Akio
金额:
$12.67万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B).
财政年份:
1988
资助国家:
日本
项目状态:
已结题
起止时间:
1988 至 1990
中文摘要
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英文摘要
High quality diamond films have been fabricated by employing a magneto-activated plasma chemical vapor deposition system (ECR Plasma CVD system) and a conventional plasma CVD system. Studies on emission centers, emission mechanism of the CVD diamond films, which are undoped, B- or N-doped, irradiated by electron or neutron, annealed, have been carried out using cathodolumionescence (CL).A variety of CL depending on crystal perfection, impurities and defects such as vacancies and interstials have been observed. Undoped CVD diamond has an emission peak at blue region (2.8-2.9eV) in its CL spectra, the same as that obtained from natural IIa diamond. From the particles of 4-5mum in size, the free exciton recombination radiation equivalent to that of natural IIb diamond has been observed. It indicates extremely high crystallinity and purity of CVD diamonds formed by plasma CVD. The recombination radiation of bound excitons due to nuetral acceptors has been observed in boron-doped CVD diamon … More ds. The luminescence intensity increases as the amount of boron in diamonds increases. The emissions from color centers are prominent after the high-energy electron or thermal neutron irradiation and subsequent annealing. The 5RL center (the zero-phonon line at 4.58eV) originated from intrinsic defects has been observed prominently in undoped CVD diamonds. In nitrogen-doped diamonds, the 3.19eV center due to nitrogen-vacancy complex has appeared after the annealing subsequent to the electron irradiation. Moreover, from the CL imaging, the intrinsic luminescence such as free exciton recombination radiation is found to be located in [100] sectors and the extrinsic luminescence such as the 2.16eV center is located in [111] sectors.In this work, an electro-luminescence has been observed, for the first time, from a Schottky diode formed by p-type diamond and Al structure. A well understanding on optical behavior of CVD diamond and a great approach to electro-luminscence devices using of CVD diamond have been contributed in this study Less
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H.Kawarada,Y.Yokota,and A.Hiraki: "Intrinsic and Extrinsic Recombination Radiation from Undoped and Boronーdoped Diamonds Formed by Plasma Chemical Vapor Depostion" Applied Physics Letters.57. 1889-1891 (1990)
H. Kawarada、Y. Yokota 和 A. Hiraki:“等离子体化学气相沉积形成的未掺杂和硼掺杂钻石的内在和外在复合辐射”《应用物理快报》,1889-1891 年(1990 年)。
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H. Kawarada, Y. Yokota, T. Sogi, H. Matusyama and A. Hiraki: "Cathodoluminescence of Exciton Recombination and Vibronic Color Centers in Undoped and Boron-Doped CVD Diamonds" SPIE-Diamond Optics. 1325. 152-159 (1990)
H. Kawarada、Y. Yokota、T. Sogi、H. Matusyama 和 A. Hiraki:“未掺杂和掺硼 CVD 钻石中激子复合和振动色心的阴极发光”SPIE-金刚石光学。
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Y.Yokota,H.Kawarada,J.S.Ma,K.Nishimura and A.Hiraki: "Cathodo Luminescence imaglug of semiconducting diamond formed by plasma CVD" Journal of Crystal Growth. 103. 65-70 (1990)
Y.Yokota、H.Kawarada、J.S.Ma、K.Nishimura 和 A.Hiraki:“等离子体 CVD 形成的半导体金刚石的阴极发光图像”晶体生长杂志。
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H.Kawaraka,Y.Yokota,T.Sogi,H.Matusyawa and A.Hiraki: "Cathodo Luminescence of Exciton Recombinations and Vibronic Color Centers in Undoped,Boronーcloped CVD Diamonds." SPIEーDiamond Optics. 1325. 152-159 (1990)
H.Kawaraka、Y.Yokota、T.Sogi、H.Matusyawa 和 A.Hiraki:“未掺杂硼掺杂 CVD 钻石中的激子重组和振动色心的阴极发光。”1325。 (1990)
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Y.Yokota,H.Kawarada,J.S.Ma,K.Nishimuraand A.Hiraki: "Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD" Journal of Crystal Growth. 103. 65-70 (1990)
Y.Yokota、H.Kawarada、J.S.Ma、K.Nishimura 和 A.Hiraki:“等离子体 CVD 形成的半导体金刚石的阴极发光成像”晶体生长杂志。
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共 38 条
Gene-gene and gene-environment interactions between polymorphisms in alcohol-metabolizing enzyme genes and the risk of gastric cancer
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批准号:20590624
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.08万
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财政年份:2008
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负责人:HIRAKI Akio
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依托单位:
Heteroepitaxial Nucleation and Growth of Diamond
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批准号:07044312
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项目类别:Grant-in-Aid for International Scientific Research.
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资助金额:$0.0万
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财政年份:1995
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负责人:HIRAKI Akio
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依托单位:
Development of Diamond Film Synthesis at Room Temperature
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批准号:05555087
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$6.91万
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财政年份:1993
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负责人:HIRAKI Akio
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依托单位:
Deposition of High Quality Diamond Film on Beam-Irradiated Surface Using ECR Plasma
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批准号:62460059
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.65万
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财政年份:1987
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负责人:HIRAKI Akio
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依托单位:
Application ot blue light-emeitting diods of zns films unsing new epitaxial growth methof
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批准号:61850004
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$4.22万
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财政年份:1986
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负责人:HIRAKI Akio
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依托单位:
海外基金