Fabrication of High-Power Blue Emission Diveces Using Chemical Vapor Deposition Diamond

采用磁活化等离子体化学气相沉积系统（ECR等离子体CVD系统）和传统等离子体CVD系统制备了高质量的金刚石薄膜。用阴极发光技术研究了未掺杂、B或n掺杂、电子或中子辐照、退火后的CVD金刚石薄膜的发射中心和发射机理。各种CL取决于晶体的完善，杂质和缺陷，如空缺和间隙已被观察到。未掺杂CVD金刚石的CL光谱在蓝区（2.8 ~ 2.9 ev）有一个发射峰，与天然IIa金刚石相同。从4 ~ 5mum大小的粒子中，观察到与天然IIb金刚石相当的自由激子复合辐射。表明等离子体CVD形成的CVD金刚石具有极高的结晶度和纯度。在掺杂硼的CVD金刚石中观察到中性受体引起的束缚激子的复合辐射。发光强度随着金刚石中硼含量的增加而增加。在高能电子或热中子辐照和退火后，色心的辐射是显著的。在未掺杂的CVD金刚石中，主要观察到由本征缺陷产生的5RL中心（4.58eV的零声子线）。在氮掺杂金刚石中，电子辐照后退火后，由于氮空位络合物的存在，形成了3.19eV的中心。此外，从CL成像中发现，自由激子复合辐射等本然发光位于[100]扇区，2.16eV中心等本然发光位于[111]扇区。在这项工作中，首次观察到由p型金刚石和Al结构形成的肖特基二极管的电致发光。本研究为进一步了解CVD金刚石的光学特性和利用CVD金刚石制备电致发光器件提供了新的途径

High quality diamond films have been fabricated by employing a magneto-activated plasma chemical vapor deposition system (ECR Plasma CVD system) and a conventional plasma CVD system. Studies on emission centers, emission mechanism of the CVD diamond films, which are undoped, B- or N-doped, irradiated by electron or neutron, annealed, have been carried out using cathodolumionescence (CL).A variety of CL depending on crystal perfection, impurities and defects such as vacancies and interstials have been observed. Undoped CVD diamond has an emission peak at blue region (2.8-2.9eV) in its CL spectra, the same as that obtained from natural IIa diamond. From the particles of 4-5mum in size, the free exciton recombination radiation equivalent to that of natural IIb diamond has been observed. It indicates extremely high crystallinity and purity of CVD diamonds formed by plasma CVD. The recombination radiation of bound excitons due to nuetral acceptors has been observed in boron-doped CVD diamon … More ds. The luminescence intensity increases as the amount of boron in diamonds increases. The emissions from color centers are prominent after the high-energy electron or thermal neutron irradiation and subsequent annealing. The 5RL center (the zero-phonon line at 4.58eV) originated from intrinsic defects has been observed prominently in undoped CVD diamonds. In nitrogen-doped diamonds, the 3.19eV center due to nitrogen-vacancy complex has appeared after the annealing subsequent to the electron irradiation. Moreover, from the CL imaging, the intrinsic luminescence such as free exciton recombination radiation is found to be located in [100] sectors and the extrinsic luminescence such as the 2.16eV center is located in [111] sectors.In this work, an electro-luminescence has been observed, for the first time, from a Schottky diode formed by p-type diamond and Al structure. A well understanding on optical behavior of CVD diamond and a great approach to electro-luminscence devices using of CVD diamond have been contributed in this study Less