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Semiconducting Carbon Nanotube Networks for Flexible and Stretchable High-Frequency Circuits

Semiconducting Carbon Nanotube Networks for Flexible and Stretchable High-Frequency Circuits
用于柔性和可拉伸高频电路的半导体碳纳米管网络
批准号:
406952241
负责人:
Professor Dr. Ullrich Scherf
金额:
$0.0万
依托单位国家:
德国
项目类别:
Priority Programmes
财政年份:
2018
资助国家:
德国
项目状态:
已结题
起止时间:
2017-12-31 至 2023-12-31

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中文摘要
翻译
半导体单壁碳纳米管(SWNTs)的网络或薄膜具有极高的柔韧性,甚至可拉伸,而电导率却没有明显的变化。它们具有环境稳定性和耐用性,并且可以在低温下从分散体中加工,这使得它们适合在塑料和弹性基材上印刷。尽管SWNT网络中的载流子迁移率(受纳米管-纳米管结的限制)低于单个纳米管,但它们可以达到100 cm2/(Vs)以上,这对于高频电路来说已经足够了。因此,单壁碳纳米管是可打印、柔性和可拉伸电子器件的完美选择。在这个项目中,我们的目标是在基于聚合物分类的半导体碳纳米管和超薄栅极电介质网络的柔性和可拉伸基板上创建高频(10-50 MHz),低压,互补电路。我们将设计和合成新的共轭聚合物,它可以高度选择性地分散半导体SWNT,并且可以简单地处理纯化的SWNT油墨(例如,通过气溶胶喷射打印或喷涂),但也可以在SWNT沉积后通过解聚很容易地去除,以最大化载流子迁移率。所获得的SWNT网络将集成在n和p掺杂的场效应晶体管中,介质基于柔性衬底上具有超高电容的自组装单层,并集成在高频无线应用的互补电路中。
英文摘要
Networks or thin films of semiconducting single-walled carbon nanotubes (SWNTs) are extremely flexible and even stretchable without noticeable changes in conductivity. They are environmentally stable and durable, and can be processed from dispersions at low temperatures, which makes them suitable for printing on plastic and elastic substrates. Although the carrier mobilities in SWNT networks - limited by nanotube-nanotube junctions - are lower than in individual nanotubes, they reach more than 100 cm2/(Vs), which is sufficient for high-frequency circuits. Thus, SWNTs are the perfect choice for printable, flexible and stretchable electronics. In this project we aim to create high-frequency (10-50 MHz), low voltage, complementary circuits on flexible and stretchable substrates based on networks of polymer-sorted semiconducting carbon nanotubes and ultrathin gate dielectrics. We will design and synthesize new conjugated polymers that enable highly selective dispersion of only semiconducting SWNTs and simple processing of purified SWNT inks (e.g. by aerosol-jet printing or spray-coating) but can also be easily removed by depolymerization after SWNT deposition for maximized carrier mobilities. The obtained SWNT networks will be integrated in n- and p-doped field-effect transistors with dielectrics based on self-assembled monolayers with ultrahigh capacitances on flexible substrates and integrated in complementary circuits for high frequency wireless applications.
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