Dynamical Analysis and Modeling of Experimental Data from Nonlinear Circuit Elements ("DYNAMODE")

该项目的一个重要目标是通过应用电路和系统理论的方法来推导和分析新的非线性记忆阻器模型，如项目描述中所述的那样。同时，虽然有相当多的文献关于忆阻器，但用适当定义忆阻器的方程的定量紧凑模型，即与状态相关的欧姆定律以及定义状态方程，仅在少数情况下被提出和分析。这里值得注意的是，忆阻器形式主义的应用极大地加速了对非易失性存储器和各种形式的神经形态计算的研究。为了发展新型的忆阻器电路以取代部分传统的CMOS工艺，有必要应用物理和化学的方法，进行精确和详细的测量，以获得电路理论器件模型，从而在标准的Designer软件中对忆阻器元件和电路进行准确和稳定的模拟。我们的研究将集中于通过适当的调节参数来推导新的动力学模型，以使其他研究人员能够将该模型推广到其他系统。这项计划中的工作重点是惠普实验室和劳伦斯伯克利国家实验室为NbO2忆阻器创建的一个新的非常全面的实验数据库，该数据库已由Stanley Williams博士提供给德累斯顿的工作组，在那里将与NamLab gGmbH合作进行额外的测量。与我们正在进行的工作相比，我们需要基于这些数据进行全面的调查，以详细的形式监测设备的动态，到目前为止还没有。我们还计划确定更广泛的MEM元件的动态非线性模型，包括各种类型的电感和电容器，赋予现有电路元件新的功能，这可能会推动在传感、信号分析和本地计算方面取得更大进展，即在具有本地内存的非冯·诺依曼架构上进行计算。特别是，我们将应用导出的模型来探索非线性动态电路元件的各种应用，如信号传输和分析、放大、数据传输和局部计算。

One important aim of this project is to derive and analyze new nonlinear memristor models by applying methods of circuit and system theory for a range of physical systems as presented in the project description. Although there is meanwhile a considerable bulk of literature on memristors, quantitative compact models with equations that properly define memristors, i.e. a state-dependent Ohm’s Law along with the defining state equations, have been proposed and analyzed in a few cases only. Here it is important to note that the application of the memristor formalism has dramatically accelerated research in nonvolatile memories and various forms of neuromorphic computation. For the future development of new innovative memristor circuits replacing partly conventional CMOS technology, it is necessary, to apply methods from physics and chemistry and to perform accurate and detailed measurements in order to obtain circuit theoretic device models allowing an accurate and stable simulation of memristor elements and circuits in standard designer software. Our investigations will be focused on the derivation of new dynamical models with appropriate tuning parameters to enable the models to be generalized to other systems by other researchers. This planned work is focused on a new very comprehensive experimental data base for the NbO2 memristor created at HP Labs and at the Lawrence Berkeley National Laboratory, it is already provided by Dr. Stanley Williams to the working group in Dresden where additional measurements will be performed in cooperation with the Namlab gGmbH. As compared to our ongoing work, here we need comprehensive investigations based on these data monitoring the device dynamics in a detailed form not being available so far. We are also planning to determine dynamical nonlinear models of a wider sets of mem-elements including various types of inductors and capacitors, giving new capabilities to existing circuit elements that could spur even more progress in sensing, signal analysis and local computation, i.e. computing on non-von Neumann architectures with local memory. Especially, we will apply derived models to explore a variety of applications for nonlinear dynamical circuit elements, such as signal transduction and analysis, amplification, data transmission and local computation.