Fundamentals of THz Circuits and Systems in Advanced SiGe HBT Technologies

先进 SiGe HBT 技术中太赫兹电路和系统的基础知识

• 批准号: 419161860
• 负责人: Professor Dr. Ullrich Pfeiffer
• 金额: --
• 依托单位: Lehrstuhl für Hochfrequenzsysteme in der Kommunikationstechnik (IHCT)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/419161860?language=en
• 关键词: Fundamentals; THz; Circuits; Systems; Advanced

The speed at which semiconductor devices operate has profoundly transformed our modern industrial world from fundamental science through practical applications. Advanced SiGe HBT bipolar-transistor technologies have unlocked parts of the electromagnetic spectrum otherwise inaccessible to modern electronic systems. It is the aim of Dotseven2IC to fundamentally understand the limitations and capabilities of advanced SiGe HBT technologies in this new transition region from mmWave to THz frequencies. This will be reached by combining exploratory circuit design with feedback-oriented device optimization to systematically understand the key bottlenecks that limit performance. Trade-offs involve HBT transistor fabrication and design, highly integrated transmitter/receiver circuits around 300 GHz and fundamental THz building blocks. Dotseven2IC will exploit today's fastest SiGe HBTs to research leading-edge circuits and systems operating at unprecedented speeds and to identity the fundamental issues preventing further performance gains.

半导体设备的运行速度已经深刻地改变了我们的现代工业世界，从基础科学到实际应用。先进的SiGe HBT双极晶体管技术解锁了部分电磁频谱，否则现代电子系统无法获得。Dotseven2IC的目标是从根本上了解先进的SiGe HBT技术在这个从毫米波到太赫兹频率的新过渡区域的限制和能力。这将通过将探索性电路设计与面向反馈的器件优化相结合来实现，以系统地了解限制性能的关键瓶颈。权衡涉及HBT晶体管制造和设计、300 GHz左右的高集成度发送器/接收器电路和基本太赫兹积木。Dotseven2IC将利用当今最快的SiGe HBT来研究以前所未有的速度运行的前沿电路和系统，并找出阻碍性能进一步提高的根本问题。