Fundamentals of THz Circuits and Systems in Advanced SiGe HBT Technologies

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The speed at which semiconductor devices operate has profoundly transformed our modern industrial world from fundamental science through practical applications. Advanced SiGe HBT bipolar-transistor technologies have unlocked parts of the electromagnetic spectrum otherwise inaccessible to modern electronic systems. It is the aim of Dotseven2IC to fundamentally understand the limitations and capabilities of advanced SiGe HBT technologies in this new transition region from mmWave to THz frequencies. This will be reached by combining exploratory circuit design with feedback-oriented device optimization to systematically understand the key bottlenecks that limit performance. Trade-offs involve HBT transistor fabrication and design, highly integrated transmitter/receiver circuits around 300 GHz and fundamental THz building blocks. Dotseven2IC will exploit today's fastest SiGe HBTs to research leading-edge circuits and systems operating at unprecedented speeds and to identity the fundamental issues preventing further performance gains.