High performance diffractometer for analysis of thin and epitaxial layers

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For the structural characterization of epitaxially grown III-V compound semiconductors, piezoelectric layers and thin metallic, ceramic or glass layers, we need a high performance x-ray diffractometer. To be able to continue and optimize the development of such materials. it is necessary to obtain information about their lattice parameters and structure, strain states, texture and phase distribution. In particular, characterization of very thin monocrystalline and epitaxially grown films on lattice-mismatched substrates requires methods such as high-resolution x-ray diffraction, reciprocal space mapping, gracing incidence (wide-angle as well as small-angle scattering) and reflectometry, which requires a five angle gradle setup with optimized optics. Unfortunately, the installed x-ray diffractometer at Clausthal University of Technology are powder diffractometer or have a two angle goniometer and are therefore not suitable for our needs. Additionally, for characterization of strain state, analysis of micro structure and phase distribution or spatial mapping of the structure of inhomogenous samples, we need a point focus optics. Since the strain state is strongly dependend on temperature in some by us investigated material groups, we would like to install a heating chamber, in which structural characterization can be carried out under specific atmospheric condition to study the temperature dependence of changes in the microstructure.