X-ray Diffractometer for Thin Film Analysis
X-ray Diffractometer for Thin Film Analysis
批准号:
433623002
负责人:
金额:
$0.0万
依托单位国家:
德国
项目类别:
Major Research Instrumentation
财政年份:
2019
资助国家:
德国
项目状态:
未结题
起止时间:
2018-12-31 至 --
中文摘要
要求提供资金用于半导体薄膜和异质结构的高级分析的X射线衍射仪。该系统将安装在慕尼黑工业大学沃尔特·肖特基研究所(TUM),并将成为PI致力于开发氮化物、氧氮化物和应用于太阳能转换的有机-无机钙钛矿材料研究的关键表征工具。这些材料是通过PI研究组提供的一系列沉积技术来制备的,包括反应溅射、原子层沉积、分子束外延和旋涂。将使用可靠和多功能的X射线衍射仪来获取结构信息,包括相、应变、纹理和马赛克。研究结果将为沉积工艺的优化提供反馈。此外,现场温控阶段将被用来监测这些性质在高温下的演变,以及在低温下的相变。初步研究项目将包括:i)开发用于太阳能捕获的p型过渡金属氮化物,ii)了解缺陷工程有机-无机复合钙钛矿中的组成-结构-功能关系,iii)阐明分子束外延生长的(GaN)1-x(ZnO)x薄膜的光电性质和光化学特性,以及iv)III-N族半导体异质结构和纳米系统。建议的X射线衍射仪的规格选择是为了最大限度地提高科学灵活性,从而实现价值。
英文摘要
Funding is requested for an X-ray diffractometer for advanced analysis of semiconductor thin films and heterostructures. The system will be installed at the Walter Schottky Institute, Technical University of Munich (TUM), and will be a key characterization tool in the PI’s research dedicated to the development of nitride, oxynitride, and hybrid organic-inorganic perovskite materials with application for solar energy conversion. These materials are prepared through a range of deposition techniques available in the PI’s research group, including reactive sputtering, atomic layer deposition, molecular beam epitaxy, and spin coating. A reliable and versatile X-ray diffractometer will be used to acquire structural information, including phase, strain, texture, and mosaicity. Results will provide feedback for the optimization of deposition procedures. In addition, an in situ temperature-controlled stage will be used to monitor the evolution of these properties at elevated temperature, as well as phase transformations at low temperature. Initial research projects will include: i) Development of p-type transition metal nitrides for solar energy capture, ii) Understanding composition-structure-function relationships in defect-engineered hybrid organic-inorganic perovskites, iii) Elucidation of optoelectronic properties and photochemical characteristics of (GaN)1-x(ZnO)x thin films grown by molecular beam epitaxy, and iv) Group III-N semiconductor-based heterostructures and nanosystems. The specifications of the proposed X-ray diffractometer are chosen to maximize scientific flexibility and, thus, value.
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