Understanding and suppressing interfacial charge recombination for high performance perovskite solar cells (SURPRISE II)

了解和抑制高性能钙钛矿太阳能电池的界面电荷复合（SURPRISE II）

• 批准号: 423749265
• 负责人: Professor Dr. Norbert Koch
• 金额: --
• 依托单位: Helmholtz-Zentrum Berlin für Materialien und Energie GmbH (HZB)
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/423749265?language=en
• 关键词: Understanding; suppressing; interfacial; charge; recombination

During the first funding period, the SURPRISE project aimed at unravelling the processes that govern interfacial recombination in high performance pin-type cells with organic charge transport layers, with particular focus on understanding the interfacial recombination pathways, the energy level alignment at the interface, as well as the operation mechanism of interlayers and back-surface fields due to doping. The project has also opened up new research directions, by developing advanced opto-electronic characterization methodologies, by identifying a novel operando energy level alignment phenomenon, and by highlighting the role of mobile ions and of the built-in field on device performance. In the proposed follow-up project SURPRISE II, the same team from the first funding period will address demanding research questions of highest topicality with respect to interfacial recombination and defect states. In particular, we will focus on the impact of the grain size, surface and interface chemistry, doping, and crystal strain on the interfacial recombination losses. New research objectives aim at unraveling the impact of interfaces on device ageing and degradation, and the development of advanced experimental methodologies to reliably determine the built-in voltage and the entire solar cells’ band diagram – in the ground state and under operation conditions. Furthermore, we target providing comprehensive understanding of the impact of mobile ions on interfacial recombination, especially with respect to device degradation. Finally, based on our findings in the first funding period with regard to the location of the dominant interfacial recombination loss, point contacts with electron TLs in combination with newly designed interlayers will be developed to reduce the contact area between the perovskite and the TL. Overall, the SURPRISE II project will establish novel principles to systematically mitigate interfacial recombination for efficient and more stable pin-type cells approaching 25% power conversion efficiency.

在第一个资助期，这个令人惊讶的项目旨在揭开控制具有有机电荷传输层的高性能针型电池中界面复合的过程，特别是重点了解界面复合途径，界面能级排列，以及由于掺杂而导致的夹层和背场的运行机制。该项目还开辟了新的研究方向，开发了先进的光电表征方法，确定了一种新的操作曲能级排列现象，并突出了移动离子和内置磁场对设备性能的作用。在拟议的后续项目惊喜II中，来自第一个资助期的同一团队将解决与界面复合和缺陷状态有关的最高专题性的严苛研究问题。特别是，我们将重点讨论晶粒度、表面和界面化学、掺杂和晶体应变对界面复合损失的影响。新的研究目标旨在揭示界面对器件老化和退化的影响，并开发先进的实验方法，以可靠地确定内置电压和整个太阳能电池的带状图-在基态和运行条件下。此外，我们的目标是全面了解移动离子对界面复合的影响，特别是关于器件退化的影响。最后，基于我们在第一个资助期中关于主要界面复合损失的位置的发现，将开发与电子TL相结合的点接触，并结合新设计的中间层来减小钙钛矿和TL之间的接触面积。总体而言，惊喜II项目将建立新的原理，系统地缓解界面复合，以实现更高效、更稳定的管脚型电池，接近25%的功率转换效率。