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Formation of Ultra-Thin Hetero-Epitaxial SOI Structure and Its Application to Thin Film Transistors.

超薄异质外延SOI结构的形成及其在薄膜晶体管中的应用。

基本信息

批准号：
01460140
负责人：
NAKAMURA Tetsuro
金额：
$ 4.1万
依托单位：
Toyohashi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01460140/
关键词：
SOI Thin film transistor Al_2O_3 Gas source MBE Selective epitaxy Electron beam irradiation 電子線照射選択成長 Siヘテロエピタキシャル成長エピタキシャル絶縁膜

项目摘要

In order to realize ultra thin SOI transistor, heteroepitaxial growth of Si thin film on epitaxial Al_2O_3/Si substrate was investigated by CVD and MO-MBE method. Hetero-epitaxial growth of Si thin film (100 nm) by CVD method was carried out using SiH_4 at growth temperature of 1050^ﾟC. The grown film indicated spot pattern including twin by RHEED observation. The ultra thin SOI transistors were fabricated on this structure and successful operation was confirmed. However it was found that the transistor characteristics were affected by defect in Si film such as twin structure. On the other hand, MO-MBE growth of Si thin film (100 nm) on Al_2O_3/Si was carried out using Si_2H_6 at lower growth temperature of 750^ﾟC. The RHEED pattern of grown film indicated sharp 2x1 streak pattern. The property of the Si/Al_2O_3/Si structure was evaluated by cross-sectional TEM technique using ion milling apparatus, and the crystallinity around hetero-epitaxial interface was observed. We have successfully realized the epitaxially stacked Si/Al_2O_3/Si structure.From these results, it was found that MO-MBE growth of Si thin film on Al_2O_3/Si was greatly effective for improving film quality, and this technique was attractive for the realization of ultra thin SOI structure.

为了实现超薄SOI晶体管，采用CVD和MO-MBE方法，研究了在外延Al_2O_3/Si衬底上异质外延生长Si薄膜。采用CVD法采用SiH_4在1050℃的生长温度下异质外延生长Si薄膜(100 nm)。通过RHEED观察，生长的膜显示出包括孪生的斑点图案。在此结构上制作了超薄SOI晶体管，并证实了其成功运行。然而，发现晶体管特性受到Si膜中的缺陷（例如孪晶结构）的影响。另一方面，使用Si_2H_6在750℃的较低生长温度下在Al_2O_3/Si上进行了Si薄膜（100 nm）的MO-MBE生长。生长薄膜的 RHEED 图案显示出尖锐的 2x1 条纹图案。使用离子铣削装置通过截面TEM技术评价Si/Al_2O_3/Si结构的性能，并观察异质外延界面周围的结晶度。我们成功地实现了外延堆叠的Si/Al_2O_3/Si结构。从这些结果可以看出，Al_2O_3/Si上Si薄膜的MO-MBE生长对于提高薄膜质量非常有效，该技术对于超薄SOI结构的实现具有吸引力。