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Fundamental Research of Epitaxial Growth of Insulator Films Using Ultra-Violet Irradiation

紫外辐射绝缘体薄膜外延生长的基础研究

基本信息

批准号：
61460124
负责人：
NAKAMURA Tetsuro
金额：
$ 4.16万
依托单位：
Toyohashi University of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1986
资助国家：
日本
起止时间：
1986 至 1987
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-61460124/
关键词：
epitaxial growth of Al_2O_3 films Gas Source MBE Ultra-Violet irradiation silicon substrate X線光電子分光法絶縁膜超高真空 XPS分析

项目摘要

In order to grow epitaxially insulator films (Al_2O_3) on Si substrates, absorption of Al(CH_3)_3 and N_2O gases and reaction between Si surface and the gases were investigated using X-ray photoelectron spectroscopy (XPS). It was found that TMA adsorption on Si clean surface at room temperature was physical adsorption, and that SiC layers were formed at the interface by annealing at 600゜C. To keep away from this phenomenon, it is very useful to cover the Si surface with a few atomic layers of oxide. From these results, epitaxial growth of Al_2O_3 films was sudied by four kinds of method : Solid phase epitaxy, laser CVD, MO-MBE, and LP-CVD. We succeeded in epitaxial growth of Al_2O_3 films on Si substrates using MO- MBE, and LP-CVD methods. Heteroepitaxial growth by MO-MBE method was performed onto (100) and (111) Si substrates at growth temperatures between 720゜C and 800゜C, in the case of LP-CVD, the growth temperature was 1000゜C. The epitaxial films had a structure of <gamma>-Al_2O_3, and the oientation relationships of (100) <gamma>-Al_2O_3/(100)Si and (111) <gamma>- Al_2O_3/(111)Si. The lattice mismatch was 2.4%, which was smaller than that of Si on Sapphire (<gamma>-Al_2O_3).

为了在硅衬底上生长Al_2O_3外延绝缘膜，用X射线光电子能谱(XPS)研究了Al(CH_3)_3和N_2O气体的吸收及其与硅表面的反应。结果表明，室温下TMA在Si清洁表面上的吸附为物理吸附，600゜C热处理后在界面处形成了碳化硅层。为了避免这种现象，在硅表面覆盖少量的氧化物原子层是非常有用的。在此基础上，采用固相外延、激光CVD、分子束外延和低压CVD四种方法研究了Al_2O_3薄膜的外延生长。我们用分子束外延和低压化学气相沉积的方法在硅衬底上成功地外延生长了Al_2O_3薄膜。采用分子束外延技术在(100)和(111)Si衬底上进行了异质外延生长，生长温度为1000゜C，生长温度为720~800゜C。外延膜的结构为&lt；-γ&gt；-Al_2O_3，其取向关系为(100)&lt；-Al_2O_3/(100)Si和(111)&lt；-Al_2O_3/(111)Si。晶格失配为2.4%，小于Si在蓝宝石(&lt；Gamma&Gt；-Al_2O_3)上的晶格失配。