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Electroplasticity Memory Device Using Conducting Polymer and Electrolyte Gel

使用导电聚合物和电解质凝胶的电可塑性存储器件

基本信息

批准号：
02452251
负责人：
KANETO Keiichi
金额：
$ 3.65万
依托单位：
Kyushu Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-02452251/
关键词：
Conducting Polymer Solid State Electrolyte Memory Device Electrochemical Oxidation Transistor Polythiophene

项目摘要

Conducting polymers of quasi-one-dimensional semiconductor can be reproducibly doped and undoped with oxidizing and reducing agents between polymer chains by electrochemical method and turns into metallic conductor from semiconductor. Using this novel property, the electroplasticity memory devices were fabricated, and the responses by input signals and memory characteristics were investigated.Two types of memory devices with 3-electrode and 2-electrode were fabricated the memory channel was composed with conducting polymer of poly(3-methylthiophene). Microelectrochemical cell was constructed similar to the conventional field effect transistor with solid polymer electrolyte of polyethylene oxide and propylene oxide co-polymer with LiCl04. The poly(3-methylthiophene was synthesized electrochemically between source and drain, on which the solid polymer electrolyte was pasted. For the case of 3-electrode device, the input electrode of Li was pressed on the solid electrolyte.The responses of the channel conductivity by the application of the input signals such as potential sweep and pulse voltage were measured. From the experimental results, the devices operated by the both signals as expected and indicated the memory function with learning effect. It is also found that the channel conductivity depended on the magnitude of pulse voltage and frequency of pulses. The characteristics of these devices can not be achieved by the inorganic semiconductors, are resembled to the synapse plasiticity of neural networks. The improvement of response time, memory characteristics and the construction of a signal process system are the subject of further investigations.

准一维半导体导电聚合物可以通过电化学方法在聚合物链间重复掺杂和不掺杂氧化还原剂，由半导体变成金属导体。利用这一新特性，制备了电塑性存储器件，研究了其对输入信号的响应和存储特性，制备了三电极和两电极两种类型的存储器件，存储沟道由导电聚合物聚3-甲基噻吩构成。类似于常规场效应晶体管，用聚环氧乙烷和环氧丙烷共聚物与LiCl 〇 4的固体聚合物电解质构建微电化学电池。在源漏之间电化学合成了聚3-甲基噻吩，并在其上粘贴了固体聚合物电解质。对于三电极器件，将Li的输入电极压在固体电解质上，测量了通道电导率对电位扫描和脉冲电压等输入信号的响应。从实验结果来看，这两种信号都能使器件正常工作，并显示出具有学习效果的记忆功能。研究还发现，沟道电导率与脉冲电压的大小和脉冲频率有关。这些器件的特性是无机半导体所不能达到的，类似于神经网络的突触可塑性。响应时间、存储特性的改善以及信号处理系统的构建是进一步研究的主题。