Research of Ballistic Conduction at Nano-scale Area

以区域规整聚烷基噻吩（HT-PATs）为靶材料，研究了载流子的产生、输运和界面形成机理。结果表明：（1）Al/HT-PAT/Au二极管由Al/HT-PAT界面的肖特基接触和HT-PAT/Au界面的欧姆接触组成。耗尽层的厚度估计为几十纳米。(2)随着烷基链长的减小，HT-PAT的迁移率增大。在丁基体系中，最大迁移率为0.01 cm^2V/s。(3)电位分布的直接测量表明，在Al/HT-PAT 6/Au电池中，95%的电位降发生在Al/HT-PAT 6界面。HT-PAT 6/Au界面也具有100 kΩ的接触电阻。

The mechanisms of carrier generation and transportation, and interface generation have been investigated in regioregular polyalkylthiophenes (HT-PATs) as the target material. It was revealed that: (1) Al/HT-PAT/Au diode is constituted by Schottky contact at Al/HT-PAT interface and Ohmic contact at HT-PAT/Au. The thickness of depletion layer was estimated to be several ten nanometers. (2) Mobilities of HT-PATs increased with the decrease of alkyl chain length. The maximum mobility was obtained to be 0.01 cm^2V/s in butyl system. (3) Direct measurements of potential distribution revealed that 95% potential drops at Al/HT-PAT6 interface in Al/HT-PAT6/Au cell. HT-PAT6/Au interface also has 100 kΩ as the contact resistance.