Low-Temperature Deposition of Dielectric Films Using Synchrotron Radiation-Assisted Gas-Source CVD

使用同步辐射辅助气源 CVD 低温沉积介电薄膜

• 批准号: 03452149
• 负责人: HIWANO Michio
• 金额: $ 4.54万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452149/
• 关键词: Synchrotron Radiation; Dielectric Film; Low-Temperature Process; Semiconductor Surface; Photo-Induced Reaction; CVD; 放射光励起

We have investigated the method of depositing dielectric films at low temperature using synchrotron radiation (SR)-assisted chemical-vapor-deposition (CVD). In the method investigated here, a clean semiconductor surface is irradiated by SR in the vacuum ultraviolet (VUV) region while dosing the surfaces with source gases, thereby enhancing both photon-induced decomposition of source gases and chemical reactions on the semiconductor surface.It is quite important for deposition high-quality dielectric film to produce a clean, chemically stable semiconductor surface. We have therefore investigated the following cleaning processes of Si surfaces : (1) removal of native oxide on Si by SR irradiation, (2) Removal of carbon contamination using ultraviolet (UV) ozone, and (3) Cleaning of Si surface with dilute hydrofluoric acid (HF) solution. We have elucidated the initial stages of UV ozone oxidation of hydrogen-terminated Si surfaces. Futhermore, it was demonstrated with infrared spectroscopic measurements that microscopic roughness of Si surface treated in HF solution strongly depends on the pH of the solution.SR-induced reactions of silicon alkoxides such as tetraethoxysilane (TEOS) adsorbed on Si surface have been investigated using photon-stimulated desorption (PSD), photoemission and infrared (IR) absorption spectroscopy. We observed the decomposition of the alkoxyl group in alkoxide molucules due to SR irradiation. It was confirmed with photoemission and IR measurements that ST in the VUV region decomposes alkoxide molecules to form silicon oxide film. In this study, we found that alkoxide is a promising class of source materials for silicon oxide formation.

我们研究了使用同步辐射（SR）辅助化学气相沉积（CVD）在低温下沉积介电薄膜的方法。在此研究的方法中，在真空紫外（VUV）区域对干净的半导体表面进行SR照射，同时向表面注入源气体，从而增强源气体的光子诱导分解和半导体表面的化学反应。对于沉积高质量介电薄膜以产生清洁、化学稳定的半导体表面非常重要。因此，我们研究了以下硅表面清洁工艺：（1）通过SR辐射去除硅上的原生氧化物，（2）使用紫外线（UV）臭氧去除碳污染，以及（3）使用稀氢氟酸（HF）溶液清洁硅表面。我们已经阐明了氢封端硅表面的紫外臭氧氧化的初始阶段。此外，红外光谱测量表明，在 HF 溶液中处理的 Si 表面的微观粗糙度很大程度上取决于溶液的 pH 值。利用光子刺激解吸 (PSD)、光电子发射和红外 (IR) 吸收研究了吸附在 Si 表面上的硅醇盐（例如四乙氧基硅烷 (TEOS)）的 SR 诱导反应。 光谱学。我们观察到由于 SR 照射，醇盐分子中的烷氧基发生分解。通过光电发射和红外测量证实，VUV区域的ST分解醇盐分子形成氧化硅膜。在这项研究中，我们发现醇盐是一类很有前景的氧化硅形成原料。

项目成果

M.Niwano et al.: "Hydrogen-Termination of the NH4F-Treated Si(111)Surface Studied by Photoemission and Surface Infrared Spectroscopy" Journal of Applied Physics. 72. 2488-2491 (1992)

M.Niwano 等人：“通过光电发射和表面红外光谱研究的 NH4F 处理的 Si(111) 表面的氢终止”应用物理学杂志。

M.Niwano, K.Kinashi, K.Saito, N.Miyamoto, and K.Honma: ""UV-Induced Deposition of SiO_2 Film from TEOS Spin-coated on Si"" J.Electrochem. Soc.(in press). (1994)

M.Niwano、K.Kinashi、K.Saito、N.Miyamoto 和 K.Honma：“从 TEOS 旋涂在 Si 上紫外诱导沉积 SiO_2 薄膜”J.Electrochem。

N.Niwano, J.Kageyama, K.Kinashi, J.Sawahata, N.Miyamoto: ""Oxidation of Hydrogen-Terminated Si Surfaces Studied by Infrared Spectroscopy"" Surf. Sci. Lett.Vol.301. pp.L245-L249 (1994)

N.Niwano、J.Kageyama、K.Kinashi、J.Sawahata、N.Miyamoto：“通过红外光谱研究氢封端硅表面的氧化”冲浪。

M.Niwano et al.: "Hydrogen Termination of the NH4F-Treated Si(111)Surface Studied by Photoemission and Surface Infrared Spectroscopy" Mat.Res.Soc.Symp.Proc.315. 505-511 (1993)

M.Niwano 等人：“通过光电发射和表面红外光谱研究的 NH4F 处理的 Si(111) 表面的氢终止”Mat.Res.Soc.Symp.Proc.315。

M.Niwano et al.: "UV-Induced Deposition of SiO_2 Film from TEOS Spin-Coated on Si" Journal of the Electrochemistry Society. (印刷中). (1994)

M. Niwano 等人：“在硅上旋涂 TEOS 的 UV-Induced Deposition of SiO_2 Film”（电化学学会杂志）（1994 年出版）。