Research of MOS-Type Single Election Transistor (SET) with Very Thin Dielectric Film

The purpose of this research isto propose a new single election transistor utilizing SiResonant Tunneling MOS Transistor (SRTMOST) with thin dielectric film. During this term，我们明确了following two points. First，the direct tunneling (DT) mechanism of very thin SiO D22 film fabricated on n-type or p-typeSi(100) substrate was examined theoretically and experimentally by considering the Fermi-energy ofpolysi electrode, multi-valley effects of Si substrate (degeneracy)，inelastic scattering and surface quantization effect. Second，the device phisics of SRTMOST was examined theoretically.The ultra high vacuum scanning tunnelingmicroscopy (STM) was introduced to form both the wile -like and dot-like dielectric films. A part ofthe research grant was used to fabricate the STM。

The purpose of this research is to propose a new single election transistor (SET) utilizing Si Resonant Tunneling MOS Transistor (SRTMOST) with very thin dielectric film. During this term, we clarified the following two points. First, the direct tunneling (DT) mechanism of very thin SiOィイD22ィエD2 film fabricated on n-type or p-type Si(100) substrate was examined theoretically and experimentally by considering the Fermi-energy of poly-Si electrode, multi-valley effects of Si substrate (degeneracy), inelastic scattering and surface quantization effect. Second, the device phisics of SRTMOST was examined theoretically.The ultra high vacuum scanning tunneling microscopy (STM) was introduced to form both the wire-like and dot-like dielectric films. A part of the research grant was used to fabricate the STM.