Research of MOS-Type Single Election Transistor (SET) with Very Thin Dielectric Film

极薄介质膜MOS型单选晶体管(SET)的研究

• 批准号: 10650310
• 负责人: MATSUO Naoto
• 金额: $ 2.18万
• 依托单位: Yamaguchi University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650310/
• 关键词: very thin dielectric film; SET; degeneracy; inelastic scattering; surface quantization; ultra hige vacuum; dot; SRTMOST; トンネリングMOSトランジスタ; 細線状極薄酸化膜

The purpose of this research is to propose a new single election transistor (SET) utilizing Si Resonant Tunneling MOS Transistor (SRTMOST) with very thin dielectric film. During this term, we clarified the following two points. First, the direct tunneling (DT) mechanism of very thin SiOィイD22ィエD2 film fabricated on n-type or p-type Si(100) substrate was examined theoretically and experimentally by considering the Fermi-energy of poly-Si electrode, multi-valley effects of Si substrate (degeneracy), inelastic scattering and surface quantization effect. Second, the device phisics of SRTMOST was examined theoretically.The ultra high vacuum scanning tunneling microscopy (STM) was introduced to form both the wire-like and dot-like dielectric films. A part of the research grant was used to fabricate the STM.

本研究的目的是提出一种利用硅共振隧穿MOS晶体管(SRTMOST)的新型单电子晶体管(SET)。在这一任期内，我们澄清了以下两点。首先，从理论和实验上研究了在n型和p型Si(100)衬底上制备的超薄SiO-ィイ-D22-ィエ-D2薄膜的直接隧穿(DT)机制，包括多晶硅电极的费米能、Si衬底的多谷效应、非弹性散射和表面量子化效应。其次，对SRTMOST的器件物理层进行了理论分析，采用超高真空扫描隧道显微镜(STM)制备了线状和点状两种介质薄膜。研究经费的一部分被用于制造扫描隧道显微镜。

项目成果

N. Matsuo, T. Miura, H. Fujiwara and T. Miyoshi: "Effects of Electric Field Concentration on Resonant Tunneling of Asymmetric Oxide-Nitride-Oxide Films"Solid State Electronics. vol. 43, no. 3. 653-657 (1999)

N. Matsuo、T. Miura、H. Fujiwara 和 T. Miyoshi：“电场集中对不对称氧化物-氮化物-氧化物薄膜谐振隧道效应的影响”固态电子学。

松尾直人: "Study of Crystal Growth MechaLism for Poly-Si Film Prepared by ELA"Digest of Technical Papers of AM-LCD. 145-148 (1998)

Naoto Matsuo：“ELA 制备的多晶硅薄膜的晶体生长机制的研究”AM-LCD 技术论文摘要 145-148 (1998)。

松尾直人: "Analysis of Direct Tunneling for Thin SiO_2 Film" Japanese Journal of Applied Physics. (発表予定). (1999)

Naoto Matsuo：“SiO_2 薄膜的直接隧道分析”，日本应用物理学杂志（即将出版）。

松尾直人: "Effects of Electric Field Concerntration on Resonant Tunneling of Asymmetric Oxide-Nitride-Oxide Films"Solid State Electronics. vol.43,no.3. 653-657 (1999)

Naoto Matsuo：“电场集中对不对称氧化物-氮化物-氧化物薄膜谐振隧道的影响”，《固态电子学》第 43 卷，第 653-657 期。

松尾直人: "Study of Crystal Growth Mechanism for Poly-Si Film Prepared by ELA" Digest of Technical Papers of AM-LCD. 145-148 (1998)

Naoto Matsuo：“ELA 制备的多晶硅薄膜的晶体生长机制的研究”AM-LCD 技术论文摘要 145-148 (1998)。