Atomic Level Control of Ultrathin Dielectric Film Growth on Silicon Surfaces

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9417992 Engel This project will focus on nucleation and growth on silicon substrates of ultrathin dielectric films, to include silicon dioxide, silicon nitride, and silicon oxynitride, at moderate to low temperatures using neutral reactants at thermal and hyperthermal energies. Ultrathin oxides, nitrides, and oxynitrides will be structurally characterized at the atomic and molecular level using techniques that include scanning tunneling microscopy, Auger electron spectroscopy, and temperature programmed desorption. %%% Understanding the fundamental chemistry issues that control reactive film growth of silicon oxide, silicon nitride, and silicon oxynitride on silicon substrates of commercial importance is a very high priority within the electronics industry. Requirements for ultrathin atomically abrupt gate oxides of high uniformity demand a clear understanding of nucleation and growth on an atomic and molecular level at low temperatures, as well as knowledge about the thermally induced stresses at the interface. ***