Atomic Level Control of Ultrathin Dielectric Film Growth on Silicon Surfaces

9417992恩格尔这个项目将集中在成核和生长的硅衬底上的介电薄膜，包括二氧化硅，氮化硅，和氮氧化硅，在中低温下使用中性反应物在热和超热能。超薄氧化物，氮化物和氮氧化物将在原子和分子水平上使用包括扫描隧道显微镜，俄歇电子能谱和程序升温脱附的技术进行结构表征。 %%% 了解控制在具有商业重要性的硅衬底上的氧化硅、氮化硅和氮氧化硅的反应性膜生长的基本化学问题是电子工业中的一个非常高的优先级。 对高均匀性的非原子突变栅氧化物的要求需要在低温下在原子和分子水平上清楚地理解成核和生长，以及关于界面处的热致应力的知识。 ***

9417992 Engel This project will focus on nucleation and growth on silicon substrates of ultrathin dielectric films, to include silicon dioxide, silicon nitride, and silicon oxynitride, at moderate to low temperatures using neutral reactants at thermal and hyperthermal energies. Ultrathin oxides, nitrides, and oxynitrides will be structurally characterized at the atomic and molecular level using techniques that include scanning tunneling microscopy, Auger electron spectroscopy, and temperature programmed desorption. %%% Understanding the fundamental chemistry issues that control reactive film growth of silicon oxide, silicon nitride, and silicon oxynitride on silicon substrates of commercial importance is a very high priority within the electronics industry. Requirements for ultrathin atomically abrupt gate oxides of high uniformity demand a clear understanding of nucleation and growth on an atomic and molecular level at low temperatures, as well as knowledge about the thermally induced stresses at the interface. ***