Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area Grant

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GaAs and AlGaAs micro-Pyramidal Structures having four-fold symetry facets (011) were fabricated using selective area MOVPE on (001) GaAs substrates partlally masked with a SiO_2. In order to study accurate growth rate, wider mask-patterned substrates were used. Low pressure horizontal MOVPE reactor was used. Source materials were TMGa, TEAI, quality of micro-pyramidal structures were characterized by cleaved cross section image of scanning electron microscope (SEM) and photoluminescence (PL) from quantum well. The main results are as follows : The growth rate enhances in selective are growth, compared to a planer GaAs layr. The growth rate enhancement is small under high AsH_3 partical pressure. From these results, growth mechanisms were discussed.