Fabrication and Characterization of Semiconductor Quantum Dots by Selective Area Grant

通过选择性区域补助来制造和表征半导体量子点

• 批准号: 04452165
• 负责人: FUKUI Takashi
• 金额: $ 4.48万
• 依托单位: Hokkaido University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452165/
• 关键词: Semiconductor; Cryxtal growth; Quantum dot

GaAs and AlGaAs micro-Pyramidal Structures having four-fold symetry facets (011) were fabricated using selective area MOVPE on (001) GaAs substrates partlally masked with a SiO_2. In order to study accurate growth rate, wider mask-patterned substrates were used. Low pressure horizontal MOVPE reactor was used. Source materials were TMGa, TEAI, quality of micro-pyramidal structures were characterized by cleaved cross section image of scanning electron microscope (SEM) and photoluminescence (PL) from quantum well. The main results are as follows : The growth rate enhances in selective are growth, compared to a planer GaAs layr. The growth rate enhancement is small under high AsH_3 partical pressure. From these results, growth mechanisms were discussed.

用选区MOVPE技术在部分掩蔽SiO_2的(001)GaAs衬底上制备了具有四重对称(011)面的GaAs微金字塔结构和AlGaAs微金字塔结构。为了研究准确的生长速率，采用了更宽的掩模衬底。采用低压卧式MOVPE反应器。以TMGa、TEAI为原料，用扫描电子显微镜(SEM)解理截面图像和量子阱的光致发光(PL)对微锥体结构的质量进行了表征。主要结果如下：与平面生长的GaAs层相比，选择性Are生长的生长速率有所提高。在较高的灰分压下，生长速率的提高幅度不大。根据这些结果，对生长机制进行了讨论。

项目成果

T.Fukui: "MOCVD Methods for Fabricating GaAs Quantum Wires and Quantum Dots" Journal of Crystal Growth. 124. pp.493-496 (1992)

T.Fukui：“用于制造 GaAs 量子线和量子点的 MOCVD 方法”晶体生长杂志。

福井孝志: "選択成長を利用した量子細線・量子箱の作製(解説)" 応用物理. 61. 141-144 (1992)

Takashi Fukui：“利用选择性生长制造量子线和量子盒（评论）”应用物理 61. 141-144 (1992)。

Takashi Fukui: "GaAs Tetrahedral Quantum Dot Structures Fabricated Using Selective Area MOCVD" Surface Science. 267. 236-240 (1992)

Takashi Fukui：“使用选择性区域 MOCVD 制造砷化镓四面体量子点结构”表面科学。

Takashi Fukui: "GaAs Tetrohedral Quantum Dots Grown by Selective Area MOCVD" Superlattices and Microstructures. 12. 141-144 (1992)

Takashi Fukui：“选择性区域 MOCVD 生长的砷化镓四面体量子点”超晶格和微结构。

Takashi Fukui: "GaAs Tetrahedral Quantum Dots Grown by Selective area MOCVD" Superlattices and Microstructures. 12. 141-144 (1992)

Takashi Fukui：“选择性区域 MOCVD 生长的砷化镓四面体量子点”超晶格和微结构。