Semiconductor Nanowire Electronics by Selective-Area Metal-Organic Vapor Phase Epitaxy

建立了一种利用电子束光刻和金属有机气相外延选择性生长半导体纳米线的方法。采用电子显微镜和光致发光技术对制备的GaAs和InP纳米线的晶体结构和光学性能进行了表征。利用异质结构/p-n结纳米线制备了晶体管、发光二极管和太阳能电池，以研究该器件的特性，该器件在未来的纳米电子学中具有应用前景。

A selective growth method for semiconductor nanowires by using electron beam lithography and metal organic vapor phase epitaxy has been established. The crystal structure and optical properties of GaAs and InP nanowires grown were characterized by electron microscopy and photoluminescence. Transistors, light emitting diodes and solar cells using heterostructure/p-n junction nanowires were fabricated to investigate the device characteristics, which showed promise for application to future nano-electronics.