Fabrication and Characterization of Self-organized Quantum Nano-structures.

自组织量子纳米结构的制造和表征。

• 批准号: 06402037
• 负责人: FUKUI Takashi
• 金额: $ 16.06万
• 依托单位: HOKKAIDO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06402037/
• 关键词: Semiconductor; Crystal Growth; Quantum Dots; GaAs; MOCVD

We have fabricated AlGaAs/GaAs quantum dot structures using selective area metalorganic vapor phase epitaxy (MOVPE). First, GaAs pyramidal structures with four-fold symmetric {011} facet side walls are formed on SiN_x masked (001) GaAs with square openings. Once the pyramidal structures were completely formed, no growth occurs on the top and side walls of the pyramids. Furthermore, the shape and width of the top area observed by a scanning electron microscope (SEM) and an atomic force microscope (AFM) shows to be highly uniform. This indicates that self-limited growth mode occurs. Next, using these uniform pyramids, GaAs quantum dots are overgrown on the top of pyramids using different growth conditions. Sharp photoluminescence (PL) spectra are observed from uniform quantum dots.

我们使用选择性区域金属有机气相外延 (MOVPE) 制造了 AlGaAs/GaAs 量子点结构。首先，在具有方形开口的 SiN_x 掩模 (001) GaAs 上形成具有四重对称 {011} 面侧壁的 GaAs 金字塔结构。一旦金字塔结构完全形成，金字塔的顶壁和侧壁就不再发生生长。此外，通过扫描电子显微镜（SEM）和原子力显微镜（AFM）观察到的顶部区域的形状和宽度显示出高度均匀性。这表明出现了自限生长模式。接下来，使用这些均匀的金字塔，使用不同的生长条件在金字塔顶部生长砷化镓量子点。从均匀的量子点观察到清晰的光致发光 (PL) 光谱。

项目成果

T.Fukui: ""Self-organized Growth" (In Japanese)" Hyoumen kagaku. 16. 1 (1995)

T.Fukui：““自组织增长”（日语）”Hyoumen kagaku。

福井孝志: "結晶成長ハンドブック(分担執筆)" 共立出版, 3 (1995)

福井隆：《晶体生长手册（合着）》Kyoritsu Shuppan，3（1995）

S.Hara,J.Ishizaki,J.Motohisa,T.Fukui and H.Hasegawa: "Formation and Photoluminescence Characterization of Quantum Well Wires Using Multiatomic Steps Grown by MOVPE" Journal of Crystal Growth. 145. 692-697 (1994)

S.Hara、J.Ishizaki、J.Motohisa、T.Fukui 和 H.Hasekawa：“使用 MOVPE 生长的多原子步骤形成量子阱线并进行光致发光表征”晶体生长杂志。

R.Notzel J.Temmyo. A.kogen T.Tamamura, T.Fukui and H.Hasegawa: "Self-organization of strained GaInAs microstrudures on InP (311) substrates grown by metalorganic VPE" Appl.Phys.Letters. 66. 2525-2527 (1995)

R.Notzel J.Temmyo。

K.Kumakura, K.Nakakoshi J.Motohisa, T.Fukui, and H.Hasegawa: "Novel formation method of quontumdot structures by self-limuted selectire area MOVPE" Jpn.J.Appl.Phys.34. 4387-4389 (1995)

K.Kumakura、K.Nakakoshi J.Motohisa、T.Fukui 和 H.Hasekawa：“通过自限选择性区域 MOVPE 形成量子点结构的新方法”Jpn.J.Appl.Phys.34。