DISORDERED SUPERLATTICES
DISORDERED SUPERLATTICES
批准号:
04452175
负责人:
SASAKI Akio
金额:
$4.29万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1993
中文摘要
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英文摘要
A new semiconductor was proposed in 1989 which is featured by showing both the amorphous-like and the single-crystal-like properties. The proposed semiconducting materials are constructed either artificially or naturally so that chemical composition is disordered but physical alignment is sufficiently ordered for epitaxial growth to be possible. A disordered superlattice (d-SL) is an example of the proposed semiconductors. It was fabricated by changing individual layr widths disorderely in AlAs/GaAs superlattice. New optical and luminescence properties have been experimentally demonstrated in previous studies.In this study, the d-SLs of Al_xGa_<1-x>As/GaAs, AlAs/Al_yGa_<1-y>As, AlP/GaP,and Si_<1-x>Ge_x/Si were fabricated. The following new properties have been observed.(1) The luminescence intensity of the d-SL decays less with increasing temperature as compared with that of the ordered superlattice (o-SL) and the bulk alloy (b-AL) with the same chemical composition as the d-SL.The dis … More ordering effects were investigated with changing the Al composition, i.e., the energy band difference.(2) The effects depend proportionally on the band difference and thus become maximum at the AlAs/GaAs d-SL.(3) A good quality of the interface between AlP and GaP was obtained with using tertialybutylphosphine aand etching GaP substrate in (NH_4) S_x.(4) Photoluminescence (PL) intensities from the AlP/GaP d-SLs are 110-150 times stronger than those from the o-SLs and the b-AL at 9K.(5) PL intensities from the Si_<0.76>Ge_<0.24>/Si are several times stronger than those from the o-SLs and the b-AL at 10K.These results show that artificial disordering enhances effectively luminescent capability of the indirect-transition type of semiconductors such as AlP,GaP,Si, and Ge.The disordered effects were not satisfactorily created, since a large band difference cannot be taken due to the lattice mismatch. This would be improved with surfactan epitaxy. The d-SLs will be applied to luminescence devices in the further study. Less
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A.Wakahara,T.Hasegawa,K.Kuramoto,K.K.Vong,and A.Sasaki: "Photoluminescence properties of Si_<1-X>Ge_X/Si disordered superlattice" Appl.Phys.Lett.64(印刷中). (1994)
A. Wakahara、T. Hasekawa、K. Kuramoto、K. K. Vong 和 A. Sasaki:“Si_<1-X>Ge_X/Si 无序超晶格的光致发光特性”Appl.Phys.Lett.64(出版中)。 )
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通讯作者:
A.Sasaki,X.L.Wang,and A.Wakahara: "Enhanced Electroluminescence of AlP/GaP Disordered Superlattice" Appl.Phys.Lett.(印刷中). (1993)
A. Sasaki、X. L. Wang 和 A. Wakahara:“AlP/GaP 无序超晶格的增强电致发光”应用快报(1993 年)。
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K.Uno,: "Inst.Phys.Conf.Ser.No129" Temperature Dependence of PL Properties of AlAs/Al_xGa_<1-x>As and Al_yGa_<1-y>As/GaAs Disordered Superlattices,Inst.Phys., 241-246 (1992)
K.Uno,:“Inst.Phys.Conf.Ser.No129”AlAs/Al_xGa_<1-x>As 和 Al_yGa_<1-y>As/GaAs 无序超晶格的 PL 特性的温度依赖性,Inst.Phys.,241
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X.L.Wang,A.Wakahara,and A.Sasaki: "Strong Photoluminescence from AlP/GaP Disordered Superlattice grown by Atmospheric Pressure Organometallic Vapon Phase Epitaxy Using Tertiarybutylphosphine" Appl.Phys.Lett.62. 888-890 (1993)
X.L.Wang、A.Wakahara 和 A.Sasaki:“使用叔丁基膦通过大气压有机金属气相外延生长的 AlP/GaP 无序超晶格产生强光致发光”Appl.Phys.Lett.62。
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佐々木 昭夫: "不規則超格子ーその新しい物性ー" 応用物理. 62. 151-154 (1993)
Akio Sasaki:“不规则超晶格 - 它们的新物理性质”应用物理学 62. 151-154 (1993)。
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共 18 条
Researching for New Quantum Optoelectronic Properties by Disorderly Stacked-Layer of Disordered Quantum Dots
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批准号:10450128
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.9万
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财政年份:1998
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负责人:SASAKI Akio
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依托单位:
New Quantum Optoelectronic Properties of Semiconductors with Disordered Structures
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批准号:08044139
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$3.52万
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财政年份:1996
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负责人:SASAKI Akio
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依托单位:
Light-Emitting Devices with Self-Formation Disordered Quantum Dots
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批准号:07505011
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$10.75万
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财政年份:1995
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负责人:SASAKI Akio
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依托单位:
Heteroepitaxial Mechanism of Ouantum-Effect Semiconductors
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批准号:07044142
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$1.92万
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财政年份:1995
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负责人:SASAKI Akio
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依托单位:
Realization of disordered quantum wire semicondctors
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批准号:06402039
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$14.27万
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财政年份:1994
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负责人:SASAKI Akio
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依托单位:
The Fine Art in Literary Works
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批准号:02451067
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$2.56万
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财政年份:1990
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负责人:SASAKI Akio
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依托单位:
MATERIALIZATION OF ANISOTROPIC CRYSTALLINE SEMICONDUCTORS
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批准号:01420026
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$21.82万
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财政年份:1989
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负责人:SASAKI Akio
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依托单位:
THE COMPARATIVE STUDY OF PROSIMETRA
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批准号:60450064
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.07万
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财政年份:1985
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负责人:SASAKI Akio
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依托单位:
国内基金
海外基金
新型多齿多联氮杂环氮氧化物多氨基多羧基类稀土发光配合物及其在免疫分析中的应用
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批准号:20761002
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项目类别:地区科学基金项目
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资助金额:16.0万元
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批准年份:2007
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负责人:尹显洪
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依托单位: