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DISORDERED SUPERLATTICES

DISORDERED SUPERLATTICES
无序超晶格
批准号:
04452175
负责人:
SASAKI Akio
金额:
$4.29万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1992
资助国家:
日本
项目状态:
已结题
起止时间:
1992 至 1993

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英文摘要
A new semiconductor was proposed in 1989 which is featured by showing both the amorphous-like and the single-crystal-like properties. The proposed semiconducting materials are constructed either artificially or naturally so that chemical composition is disordered but physical alignment is sufficiently ordered for epitaxial growth to be possible. A disordered superlattice (d-SL) is an example of the proposed semiconductors. It was fabricated by changing individual layr widths disorderely in AlAs/GaAs superlattice. New optical and luminescence properties have been experimentally demonstrated in previous studies.In this study, the d-SLs of Al_xGa_<1-x>As/GaAs, AlAs/Al_yGa_<1-y>As, AlP/GaP,and Si_<1-x>Ge_x/Si were fabricated. The following new properties have been observed.(1) The luminescence intensity of the d-SL decays less with increasing temperature as compared with that of the ordered superlattice (o-SL) and the bulk alloy (b-AL) with the same chemical composition as the d-SL.The dis … More ordering effects were investigated with changing the Al composition, i.e., the energy band difference.(2) The effects depend proportionally on the band difference and thus become maximum at the AlAs/GaAs d-SL.(3) A good quality of the interface between AlP and GaP was obtained with using tertialybutylphosphine aand etching GaP substrate in (NH_4) S_x.(4) Photoluminescence (PL) intensities from the AlP/GaP d-SLs are 110-150 times stronger than those from the o-SLs and the b-AL at 9K.(5) PL intensities from the Si_<0.76>Ge_<0.24>/Si are several times stronger than those from the o-SLs and the b-AL at 10K.These results show that artificial disordering enhances effectively luminescent capability of the indirect-transition type of semiconductors such as AlP,GaP,Si, and Ge.The disordered effects were not satisfactorily created, since a large band difference cannot be taken due to the lattice mismatch. This would be improved with surfactan epitaxy. The d-SLs will be applied to luminescence devices in the further study. Less
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A.Wakahara,T.Hasegawa,K.Kuramoto,K.K.Vong,and A.Sasaki: "Photoluminescence properties of Si_<1-X>Ge_X/Si disordered superlattice" Appl.Phys.Lett.64(印刷中). (1994)
A. Wakahara、T. Hasekawa、K. Kuramoto、K. K. Vong 和 A. Sasaki:“Si_<1-X>Ge_X/Si 无序超晶格的光致发光特性”Appl.Phys.Lett.64(出版中)。 )
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A.Sasaki,X.L.Wang,and A.Wakahara: "Enhanced Electroluminescence of AlP/GaP Disordered Superlattice" Appl.Phys.Lett.(印刷中). (1993)
A. Sasaki、X. L. Wang 和 A. Wakahara:“AlP/GaP 无序超晶格的增强电致发光”应用快报(1993 年)。
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K.Uno,: "Inst.Phys.Conf.Ser.No129" Temperature Dependence of PL Properties of AlAs/Al_xGa_<1-x>As and Al_yGa_<1-y>As/GaAs Disordered Superlattices,Inst.Phys., 241-246 (1992)
K.Uno,:“Inst.Phys.Conf.Ser.No129”AlAs/Al_xGa_<1-x>As 和 Al_yGa_<1-y>As/GaAs 无序超晶格的 PL 特性的温度依赖性,Inst.Phys.,241
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X.L.Wang,A.Wakahara,and A.Sasaki: "Strong Photoluminescence from AlP/GaP Disordered Superlattice grown by Atmospheric Pressure Organometallic Vapon Phase Epitaxy Using Tertiarybutylphosphine" Appl.Phys.Lett.62. 888-890 (1993)
X.L.Wang、A.Wakahara 和 A.Sasaki:“使用叔丁基膦通过大气压有机金属气相外延生长的 AlP/GaP 无序超晶格产生强光致发光”Appl.Phys.Lett.62。
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18
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    • 资助金额:
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    • 项目类别:
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    • 财政年份:
      1995
    • 负责人:
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    • 依托单位:
    国内基金
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    • 批准号:
      20761002
    • 项目类别:
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    • 资助金额:
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    • 批准年份:
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