Realization of disordered quantum wire semicondctors

1.研究了AlGaP在GaP附近衬底上的生长条件与阶跃流生长模式的关系。2.证明了AlP和GaP在GaP附近衬底上无阶跃聚束的阶梯流生长对量子线结构的干扰。3.采用阶跃流生长模式在GaP附近衬底上生长了AlP/GaP超晶格。研究了超晶格的光致发光特性。4.研究表明，作为磷源的叔丁基膦可以使AlGaP外延中作为非辐射复合中心的氧杂质的残留浓度降低一个数量级。5.除了采用阶跃流动模式研究无序量子线的生长外，还可以通过排列自组装量子点来生长量子线结构，从而提高量子效应。采用STranski-Krastanov生长模式在GaP衬底上实现了无位错的InP三维结构。

1.Relationship between growth conditions and step-flow growth mode for AlGaP growth on GaP vicinal substrates have investigated to achieve disordered quantum wire structure using step-flow growth mode on vicinal substrates.2.Step-flow growth of AlP and GaP on GaP vicinal substrates without step-bunching which disturb the quantum wire structure have demonstrated.3.AlP/GaP superlattices have grown on GaP vicinal substrates using step-flow growth mode. Photoluminescence properties of the superlattices have investigated.4.It has shown that residual concentration of oxygen impurity which acts as a non-radiative recombination center in AlGaP epi-layr can be reduced one order of magnitude by through tertiarybutylphosphine, which is phosphorus source, into AlGaIn metal bubbler.5.In addition to the investigation of growth of disordered quantum wire using step-flow mode, growth of quantum wire structure by aligning self-assembled quantum dots by which enhancement of the quantum effect is expected. InP 3D structure without any dislocations have realized by using Stranski-Krastanov growth mode on GaP substrate.