Studies of cold cathode for vacuum microelectronics

真空微电子冷阴极研究

• 批准号: 04452199
• 负责人: YOKOO Kuniyoshi
• 金额: $ 4.22万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04452199/
• 关键词: Tunnel effect; Field emission; Cold cathode; Vacuum microelectronics; MOS devices

An electron tunneling emission cathode has the potential for high current density and pressure insensitive of emission current and is a flat cathode in contrast with a field emission cathod. Due to these advantages, the tunneling cathode is a powerful candidate as a fine cathode for vacuum microelectronic devices.We have fabricated an Al-gate and an amorphous Si-gate MOS electron tunneling cathodes and have examined the emission characteristics. The emission current was given by the Fowler and Nordheim equation and the transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode was 0.7%. The emission current was very stable in the Si-gate MOS cathode, in contrast with the Al-gate cathode. In addition, the current was nearly independent of pressure ranging from 10^<-8> to 10^<-1> Torr.Energy distribution of emitted electrons were measured by a high resolution electron energy analyzier developed in this study. It became clear that the emission characteristics of the MOS electron tunneling cathode were mainly determined by scattering process of hot electrons in the conduction band of the oxide in MOS cathode. Following the experimental results, a new structure of tunneling cathode constructed with 4 thin layrs was proposed to improve emission characteristics of an electron tunneling cathode.

电子隧道发射阴极具有高电流密度和发射电流对压力不敏感的潜力，并且与场发射阴极相比是扁平阴极。由于这些优点，隧道阴极是真空微电子器件精细阴极的有力候选者。我们制造了铝栅和非晶硅栅MOS电子隧道阴极，并检查了其发射特性。发射电流由 Fowler 和 Nordheim 方程给出，传输比（即发射电流与流过 MOS 二极管的总电流之比）为 0.7%。与铝栅阴极相比，硅栅MOS阴极的发射电流非常稳定。此外，电流几乎与10^<-8>至10^<-1>托的压力无关。发射电子的能量分布由本研究中开发的高分辨率电子能量分析仪测量。发现MOS电子隧道阴极的发射特性主要由热电子在MOS阴极氧化物导带内的散射过程决定。根据实验结果，提出了一种由 4 层薄层构成的隧道阴极的新结构，以改善电子隧道阴极的发射特性。

项目成果

YOKOO,Kuniyoshi: "Emission Characteristics of Metal-Oxide-Semiconductor Electron Tunneling Cathode" J.Vac.Sci.Technol.B. 11. 1-4 (1993)

YOKOO，Kuniyoshi：“金属氧化物半导体电子隧道阴极的发射特性”J.Vac.Sci.Technol.B。

YOKOO,Kuniyoshi: "Fabrication and Operation of MOS Electron Tunneling Cathode" Tech.Digest of IEDM'92. 965-968 (1992)

YOKOO，Kuniyoshi：“MOS 电子隧道阴极的制造和操作”Tech.Digest of IEDM92。

K.Yokoo: ""The status of vacuum microelectronics"" Microwave Workshop Digest. 431-435 (1992)

K.Yokoo：“真空微电子学的现状”微波研讨会文摘。

M.Arai, H.Simawaki, K.Yokoo and S.Ono: ""Highly efficient microwave multiplier using a field emission array"" Tech. Report of IEICE. ED93-142. 55-60 (1993)

M.Arai、H.Simawaki、K.Yokoo 和 S.Ono：“使用场发射阵列的高效微波倍增器”Tech。

佐藤 信司: "MOSトンネル陰極の電子放出特性" 電子情報通信学会 技術研究報告(ED). 92,110. 25-30 (1992)

Shinji Sato：“MOS 隧道阴极的电子发射特性”IEICE 技术研究报告 (ED) 92,110 (1992)。