Study on energy distribution measurement of emitted electron from resonant tunneling cathode

谐振隧道阴极发射电子能量分布测量研究

• 批准号: 09305022
• 负责人: YOKOO Kuniyoshi
• 金额: $ 17.86万
• 依托单位: TOHOKU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09305022/
• 关键词: resonant tunneling effect; cold cathode; monochromatic energy beam; GaAs; AlAs heterostructure; quantum well; energy distribution; AlAs; MOS構造

A high current density electron beam with monochromatic energy is required for applications to high-resolution electron beam lithography, holography and electron microscopy and many vacuum microelectronic devices. A resonant tunneling electron emission passing through an energy subband in a quantum well structure is attractive to produce a monochromatic energy electron beam. We designed and fabricated GaAs/AlAs resonant tunneling cathodes with single and multi quantum wells by using molecular beam epitaxy method and photolithography techniques. Steplike or impulselike emission was observed near the gate voltage appearing the negative resistance characteristics in the diode current. The experimental results suggest that the electron emission reflects clearly the resonant effect of the electron transport in the quantum well.

在高分辨率电子束光刻、全息和电子显微镜以及许多真空微电子器件的应用中，都需要具有单色能量的高电流密度电子束。共振隧穿电子发射通过量子阱结构中的一个能带产生单色能电子束是有吸引力的。利用分子束外延技术和光刻技术设计并制备了具有单量子阱和多量子阱结构的GaAsAlAs共振隧穿阴极。在栅压附近观察到阶梯状或脉冲状发射，二极管电流呈现负阻特性。实验结果表明，电子发射清楚地反映了量子阱中电子输运的共振效应。

项目成果

H. Mimura, M. Hosoda, N. Ohtani and K. Yokoo: "Γ-X electron transfer in GaAs-AlAs type-I superlattices"Appl. Surf. Sci.. 142. 624-628 (1999)

H. Mimura、M. Hosoda、N. Ohtani 和 K. Yokoo：“GaAs-AlAs I 型超晶格中的 Γ-X 电子转移”Sci.. 142. 624-628 (1999)

K.Tahara,: "Emission mechanism in MOS tunneling cathode" Proceedings of 4th International Display Workshops. 57-60 (1997)

K.Tahara，：“MOS 隧道阴极的发射机制”第四届国际显示研讨会论文集。

H.Mimura,H.Shimawaki,K.Yokoo: "Lateral GaAs field emitters fabricated by micromachining technique"Tech. Digest of 12th Int. Vac. Microelectronics Conf.. 146-147 (1999)

H.Mimura、H.Shimawaki、K.Yokoo：“采用微加工技术制造的横向 GaAs 场发射器”Tech。

H.Mimura,K.Yokoo: "Tunneling emission from valence band of Si-metal-oxide-semiconductor electron tunneling cathode"J.Vac.Sci.Technol.. B16(2). 818-821 (1998)

H.Mimura,K.Yokoo：“硅金属氧化物半导体电子隧道阴极价带的隧道发射”J.Vac.Sci.Technol.. B16(2)。

H.Mimura,K.Yokoo: "Enhancement in electron from polycrystalline silicon field emitter arrays coated with diamond-like carbon"J.Appl.Phys.. 84. 3378-3381 (1998)

H.Mimura,K.Yokoo：“来自涂有类金刚石碳的多晶硅场发射器阵列的电子增强”J.Appl.Phys.. 84. 3378-3381 (1998)