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Basic studies of the vacuum ICs

真空IC的基础研究

基本信息

批准号：
62460115
负责人：
YOKOO Kuniyoshi
金额：
$ 4.42万
依托单位：
TOHOKU UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1987
资助国家：
日本
起止时间：
1987 至 1988
项目状态：
已结题

项目摘要

The tunnelling emitter is expected to have very promising characteristics as a cathode of vacuum tubes; because its higher emission density, lower noise temperature, higher reliability and so on, compared with those of usual thermal cathode. We have tried to develop the tunnelling emitter arrays with metal-insulator-semiconductor structure (MIS). In this structure, it is expected to be able to deposit a high quality insulator film on semiconductor by using semi-conductor processing technologies and to apply uniform electric field on MIS diode. We formed ultrathin Al_2O_3 and SiO_2 films on-n-Si wafer (100). We showed that the single crystal gamma and alpha-Al_2O_3 films were grown on n-si substrate at the substrate temperature of 650゜C and 750゜C, respectively, by the molecular layer epitaxy method. SiO_2 films were formed by the chemical oxidation and the plasmasputtering methods. The properties of film formed by the former method were investigated to be good for the tunnelling emitter use comparing with that by the latter.The arrays with MIS structure were constructed by evaporating thin metal films on the insulator layers and the I-V characteristics were measured and compared with the theoretical studies of MIS tunnel diode.Up to the present, it can be stated that good quality ultrathin insulator layers can be formed on n-Si by the chemical oxidation method and the dominant charge transport mechanism through the oxide layer is tunnelling in the MIS diode structure.

隧道发射极与普通热阴极相比，具有发射密度高、噪声温度低、可靠性高等优点，有望作为真空管阴极。我们尝试研制了金属-绝缘体-半导体结构的隧穿发射极阵列。在这种结构中，期望能够通过使用半导体处理技术在半导体上存款高质量的绝缘体膜，并在MIS二极管上施加均匀的电场。我们在n-Si晶片（100）上制备了Al_2O_3和SiO_2薄膜。我们用分子层外延法在n-Si衬底上分别在650 ℃和750 ℃下生长了单晶γ和α-Al_2 O_3薄膜。采用化学氧化法和等离子体溅射法制备了SiO_2薄膜。通过在绝缘层上蒸镀金属薄膜的方法，制备了MIS结构的阵列，测量了其I-V特性，并与MIS隧道二极管的理论研究结果进行了比较。可以说，通过化学氧化方法可以在n-Si上形成良好质量的SOI绝缘体层，并且通过氧化物层的主要电荷传输机制是MIS二极管结构中的隧穿。