HREM-STM Analyzes of Metal-C60 Interface Structures
金属-C60 界面结构的 HREM-STM 分析
基本信息
- 批准号:04452284
- 负责人:
- 金额:$ 1.09万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (B)
- 财政年份:1992
- 资助国家:日本
- 起止时间:1992 至 1993
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Since C60 crystal is cohesive of van der Waals force the material is so poor in malleability and ductility. In order to make up the defects and to make the best use of the C60, production of a composite material was attempted.Surface and interface structure of the produced composit materials were analized by scanning tunneling microscopy (STM) and high resolution electron microscopy (HREM).Grain boundary structure of a C60 thin film grown on both Au substrate and Highly Oriented Pyrolytic graphite (HOPG) substrate were successfuly observed. It was found that C60 crystal was easily nucleated and grew three dimensionally on graphite substrate. On the Au surface, stable polycrystalline thin film was formed. The film consisted of fine crystal grains. Each grains were closely packed in the film. The interface fine structure of carbon fiber/C60 and Au/C60composites were analyzed by HRTEM as well. Attributing to the large difference in lattice constant between carbon fiber and C60, any epitaxial structure was not found at the interface. However, some possibility of a coherent parallel structure still remains. At the Au/C60 composite, no evidence of third phase precipitaion was detected in or near the interface. It is concluded that C60 and Au are directly connected and its in the surface is stable.
由于C60晶体具有范德华力的粘聚力,材料的延展性和延展性都很差。为了弥补缺陷和充分利用C60,尝试制备了一种复合材料,用扫描隧道显微镜(STM)和高分辨电子显微镜(HREM)分析了所制备的复合材料的表面和界面结构,并成功地观察了在Au衬底和高取向热解石墨(HOPG)衬底上生长的C60薄膜的晶界结构。结果表明,C_(60)晶体易成核,并在石墨衬底上三维生长。在Au表面形成了稳定的多晶薄膜。薄膜由细小的晶粒组成。每一个颗粒都被紧密地包裹在胶片中。用高分辨电子显微镜分析了碳纤维/C60和Au/C60复合材料的界面精细结构。由于碳纤维和C60的晶格常数相差很大,在界面上没有发现任何外延结构。然而,一个连贯的平行结构的一些可能性仍然存在。在Au/C60复合材料中,在界面内或界面附近没有发现第三相析出的证据。结果表明,C60与Au是直接相连的,其表面是稳定的。
项目成果
期刊论文数量(28)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
石田 洋一・木塚 徳志・松崎 順・市野瀬 英喜: "極微細粒結晶材料(ナノ材料)の界面構造の高分解能電子顕微鏡解析" 電子顕微鏡. 27. 68-75 (1992)
Yoichi Ishida、Tokushi Kizuka、Jun Matsuzaki 和 Hideki Ichinose:“超细晶粒晶体材料(纳米材料)界面结构的高分辨率电子显微镜分析”《电子显微镜》27. 68-75 (1992)。
- DOI:
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- 影响因子:0
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- 通讯作者:
K.Suenaga: "Mechanical Properties of Nanocrystalline C60" J.JPN.Inst.Met.57. No.9. 1103-1104 (1993)
K.Suenaga:“纳米晶 C60 的机械性能”J.JPN.Inst.Met.57。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
Y.Ishida,T.Kizuka,J.Matuzaki and H.Icxhinose: "High Resolution Electron Microscopy of Boundaries in Nano-crystalline Materials" Proc.5th A.P.E.M. 1. 304-305 (1992)
Y.Ishida、T.Kizuka、J.Matuzaki 和 H.Icxhinose:“纳米晶体材料边界的高分辨率电子显微镜”Proc.5th A.P.E.M.
- DOI:
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- 影响因子:0
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石田 洋一: "C_<60>単結晶の超音波顕微鏡像" バウンダリー. 19. 17 (1993)
Yoichi Ishida:“C_<60>单晶的超声显微镜图像”边界19. 17 (1993)。
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- 影响因子:0
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- 通讯作者:
H.Ichinose,Y.Ishida,A.Yamaguchi and R.Yamamoto: "High Resolution Electron Microscopy of vertically magnetized multilayered Film" Proc.5th A.P.E.M. 1. 420-421 (1992)
H.Ichinose、Y.Ishida、A.Yamaguchi 和 R.Yamamoto:“垂直磁化多层薄膜的高分辨率电子显微镜”Proc.5th A.P.E.M.
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- 影响因子:0
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ICHINOSE Hideki其他文献
ICHINOSE Hideki的其他文献
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{{ truncateString('ICHINOSE Hideki', 18)}}的其他基金
Development of a new specimen thinning technique based on the quantum process.
开发基于量子过程的新样品减薄技术。
- 批准号:
12355024 - 财政年份:2000
- 资助金额:
$ 1.09万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Structure analysis of metalic and semiconductor heterojunction by the lattice image of high resolution electron microscope
利用高分辨率电子显微镜晶格图像分析金属和半导体异质结的结构
- 批准号:
61460198 - 财政年份:1986
- 资助金额:
$ 1.09万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
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