Fabrication of Fine Si Dot PN Junction pn junction and its Pseudo-One Dimensional Quantum Effects
细硅点PN结的制作及其伪一维量子效应
基本信息
- 批准号:05452189
- 负责人:
- 金额:$ 4.29万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (B)
- 财政年份:1993
- 资助国家:日本
- 起止时间:1993 至 1995
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This study was carried out to elucidate the pseudo-one dimensional quantum effects generated from a pn junction fabricated in a fine Si dot. First, fluorine (F) /hydrogen (H) -terminated Si (111) surface reaction was studied employing a combined system of FTIR-ATR and XPS in order to establish an atomic layr digital etching which was used for a damageless microfabrication of fine Si dots. It was made clear that at the initial exposure stage of F atoms, F atoms penetrate into the subsurface without their reaction with the terminated-H atoms, existing as an atomic state first, subsequently as a five-coordinated state. However, more exposure of F atoms led to the spontaneous etching, causing the rough surface. Hence, the exposure of F_2 molecule of low reactivity with Si to the H-terminated Si (111) surface was investigated. The formation of SiF was saturated at the F_2 exposure dose of 10^5L-10^7L Thus, the self-limiting reaction was first found out for the F/Si system. Next, crystal def … More ects induced by an ion implantation was studied by TEM for formation of the Si dot pn junction with a diameter less than 10nm. A dislocation parallel to the {111} plane for both cases of As and BF_2 implantations, and a micro-twin for high dose BF_2 were observed in Si dots. No defects was caused for the Si dot with a diameter less than 20nm. This may resulted form annealing-out of defects via their diffusion through surfaces and Si/SiO_2 interfaces. Finally, the double gate MOS wire and teh SOI wire using a SIMOX substrate were fabricated. The conductance oscillation due to the Coulomb blockade was observed at 4.2K for gate voltage changes in the MOS wire. Both the SOI and the MOS wires demonstrated the negative magneto-resistance due to an interference effect for the larger wire width and the positive one due to a hopping conduction for sufficiently small width. In addition, the fine pn junction in the SOI wire was fabricated and the large negative resistance was observed at 2.5 V and a room temperature. Less
这项研究的目的是阐明在精细硅点中制造的 pn 结产生的伪一维量子效应。首先,采用 FTIR-ATR 和 XPS 组合系统研究了氟(F)/氢(H)封端的 Si(111)表面反应,以建立用于精细 Si 点无损微加工的原子层数字蚀刻。结果表明,在F原子暴露的初始阶段,F原子渗入地下而不与封端的H原子发生反应,首先以原子态存在,随后以五配位态存在。然而,更多的F原子暴露导致自发蚀刻,导致表面粗糙。因此,研究了与Si低反应性的F_2分子暴露于H封端的Si(111)表面的情况。在F_2照射剂量为10^5L-10^7L时SiF的形成达到饱和,因此首次发现F/Si体系的自限反应。接下来,通过TEM研究了离子注入引起的晶体缺陷效应,以形成直径小于10nm的Si点pn结。在As和BF_2注入的情况下,在Si点中观察到平行于{111}面的位错,以及高剂量BF_2的微孪晶。直径小于20nm的Si点没有产生缺陷。这可能会导致缺陷通过表面和 Si/SiO_2 界面扩散而形成退火。最后,制作了使用SIMOX衬底的双栅极MOS线和SOI线。对于 MOS 线中的栅极电压变化,在 4.2K 时观察到由于库仑阻塞引起的电导振荡。由于较大线宽的干扰效应,SOI 和 MOS 线都表现出负磁阻,而对于足够小的宽度,由于跳频传导,SOI 和 MOS 线都表现出正磁阻。此外,在SOI线中制作了精细的pn结,并且在2.5V和室温下观察到大的负电阻。较少的
项目成果
期刊论文数量(44)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
H.Sakaue: "Reflective Absorption Spectroscopy of Reaction Process of Silicon Surface with Fluorine Radicals" Digest Papers Micro Process '94,Hsinchu,Taiwan. 230-231 (1994)
H.Sakaue:“硅表面与氟自由基反应过程的反射吸收光谱”文摘微处理94,台湾新竹。
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- 影响因子:0
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S.Shingubara: "Fabrication of a Nanometer Column pn Junction and Implanted Damage Evaluation by TEM" Extended Abstr.of the 1995 Intern.Conf.on Sol.St.Devs.and Mats.Osaka. 374-376 (1995)
S.Shingubara:“纳米柱 pn 结的制作和 TEM 植入损伤评估”1995 年 Sol.St.Devs. 和 Mats.Osaka 实习生会议的扩展摘要。
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- 影响因子:0
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Y.Horiike: "Initial Reaction of Fluorine with H-Terminated Si (111) Surface" IUVSTA Intern.Workshop on Plasma Sources and Surface Interactions in Material Processing,Fuji-Yoshida. 22 (1995)
Y.Horiike:“氟与 H 端接的 Si (111) 表面的初始反应”IUVSTA 实习生。材料加工中的等离子体源和表面相互作用研讨会,Fuji-Yoshida。
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Y.Horiike: ""Initial Reaction of Fluorine with H-Terminated Si (lll) Surface"" Proc.21st Annual Plasma Seminar. 21-29 (1995)
Y.Horiike:“氟与 H 端接的 Si (III) 表面的初始反应”Proc.21st 年度等离子体研讨会。
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- 影响因子:0
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山本 治郎: "Digital Etching Study and Fabrication of Fine Si Lines and Dots" Thin Solid Films. 225. 124-129 (1993)
Jiro Yamamoto:“精细硅线和点的数字蚀刻研究和制造”固体薄膜。225. 124-129 (1993)
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HORIIKE Yasuhiro其他文献
HORIIKE Yasuhiro的其他文献
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{{ truncateString('HORIIKE Yasuhiro', 18)}}的其他基金
Development of in-vivo pH Measurement Chip in Digestive System
消化系统体内pH测量芯片的研制
- 批准号:
14208101 - 财政年份:2002
- 资助金额:
$ 4.29万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Creation of health care device employing micro analysis chip of trace amount of blood
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- 批准号:
12450289 - 财政年份:2000
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Grant-in-Aid for Scientific Research (B)
Study on low damage engraving of ultra-fine/high aspect ratio hole for ULSI process
ULSI工艺超细/高深宽比孔低损伤雕刻研究
- 批准号:
11555179 - 财政年份:1999
- 资助金额:
$ 4.29万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Ultimate Materials and Processes for Integrated Intelligent System
集成智能系统的终极材料和工艺
- 批准号:
07248106 - 财政年份:1995
- 资助金额:
$ 4.29万 - 项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
Fabrication of ULSI highly Functional Thin Film employing High Rate and High Uniformity Digital CVD
采用高速率和高均匀性数字 CVD 制造 ULSI 高功能薄膜
- 批准号:
05555089 - 财政年份:1993
- 资助金额:
$ 4.29万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)