Ultimate Materials and Processes for Integrated Intelligent System

集成智能系统的终极材料和工艺

• 批准号: 07248106
• 负责人: HORIIKE Yasuhiro
• 金额: $ 114.88万
• 依托单位: The University of Tokyo (1998)Toyo University (1995-1997)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research on Priority Areas
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-07248106/
• 关键词: SiGe; ultra thin Si oxide; point defect relaxation process; high aspect ratio; low contact resistance; quantum chemistry calculation; field effect transistor; ferroelectric; Si高精度化プロセス; Si; Ge歪超格子; 極薄酸化膜; 低抵抗コンタクト; 高アスペクト比プロセス; Siプロセス量子化学研究

(1) Best quality SiGe material in the world was fabricated by a gas-source MBE technology to which substantially precipitation free technology was introduced. Based on the SiGe heterogeneous junction with high emission efficiency and the well-controlled quantum dots which were achieved by this technology provided 2000 and 1700 for electron and hole mobilities at the room temperature, respectively. These results allowed us to give a prospect for the SiGe FET fabrication. (2) Thermally grown oxide of the hydrogen-terminated Si(100) at 900℃ demonstrated roughness of about one atomic step. Furthermore, it was found that the roughness changed periodically with increase in the oxidation time and this corresponded exactly to the periodic variations of the surface state density distribution. In the case of the excited oxygen active species, atomically-controlled ultra-thin Si oxide with thickness of 2 6nm was grown at low temperatures of 300-500℃. Then it was found that a new planarization mec … More hanism in which the reaction of the active species was self-limited. (3) "Defect-active Processing" was proposed and confirmed. This utilizes the rearrangement effect of atoms induced during relaxation process of non-equilibrium point defects introduced to crystals, thereby leading to defect-free crystallization. (4) Contact holes with 0.15μm diameter and aspect ratio of 15 were engraved without microloading till 70nm employing substituting fluorocarbon gases. Conversion of higher order fluorocarbon radicals to lower ones at higher temperature inner wall was also found. Native oxide grown on the hole bottom Si surface Si was removed successfully by hot NFィイD23ィエD2/HNィイD23ィエD2 mixture. (5) Insertion of a SiGe layer into a Ti/Si interface reduced contact resistance to two order lower values for both n and p types. (6) A novel device which consisted of dielectric/magnetic layered films allowed us to transfer optical information detected by a organic film layer to a spin information of the magnetic-semiconductor and electric conduction information via polarixation of a ferroelectric. (7) A molecular design supporting system which enabled us to design the device fabrication process at a molecular level was developed, and this application elucidated successfully dynamic behaviors of various processes. Furthermore, a theoretical method based on a quantum chemistry led to systematic understanding of thermal decomposition of SiHィイD24ィエD2 on the hydrogen-terminated Si surface and elemental reaction process of the Cu CVD. (8) Dynamic Threshold MOS (EIB-DTMOS) structure which had the large substrate biasing constant was proposed and it demonstrated the two times larger current drivability as compared with the conventional FET. Less

(1)采用气体源分子束外延技术，引入基本无沉淀技术，制备出了目前世界上质量最好的SiGe材料。基于高发射效率的SiGe异质结和良好控制的量子点，该技术在室温下分别提供了2000和1700的电子和空穴迁移率。这些结果为SiGe FET的制备提供了前景。(2)在900℃下热生长的氢封端的Si（100）的氧化物显示出大约一个原子级的粗糙度。此外，它被发现，粗糙度周期性地改变随着氧化时间的增加，这正好对应于表面态密度分布的周期性变化。在激发态氧活性种的情况下，在300-500℃的低温下生长了厚度为2.6nm的原子控制的超薄氧化硅。然后发现一种新的平坦化mec ...更多信息 活性物种的反应是自限制的。(3)提出并确认了“缺陷主动处理”。这利用了在引入晶体的非平衡点缺陷的弛豫过程中诱导的原子重排效应，从而导致无缺陷结晶。(4)在无微负载的情况下，使用替代氟碳气体雕刻直径为0.15μm、纵横比为15的接触孔，直到70 nm。用热NF_（10）D_23_（10）D_2/HN_（10）D_23_（10）D_2混合物成功地去除了孔底Si表面生长的自然氧化物。(5)将SiGe层插入到Ti/Si界面中对于n型和p型都将接触电阻降低到两个更低的值。(6)一种由介电/磁性分层薄膜组成的新型器件，使我们能够将有机薄膜层检测到的光学信息转换为磁性半导体的自旋信息和铁电体的极化信息。(7)开发了一个分子设计支持系统，使我们能够在分子水平上设计器件制造过程，并成功地阐明了各种过程的动态行为。此外，基于量子化学的理论方法导致系统地理解SiH D24 D2在氢封端的Si表面上的热分解和Cu CVD的元素反应过程。(8)提出了一种具有大衬底偏置常数的动态阈值MOS（EIB-DTMOS）结构，其电流驱动能力是传统FET的两倍。少

项目成果

K.Sakata,A.Tachibana,S.Zaima and Y.Yasuda: "Quantum chemical study of the oxidation sites in hydrogen-and water-terminated Si dimers:Attempt to understand the Si-Si back-bond oxidation on the Si surface" Jpn.J.Appl.Phys.37. 4962-4973 (1998)

K.Sakata、A.Tachibana、S.Zaima 和 Y.Yasuda：“氢端硅和水端硅二聚体中氧化位点的量子化学研究：尝试了解硅表面上的硅-硅背键氧化”

H.Yaguchi,et al.: "Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell" Thin Solid Films. 321. 241-244 (1998)

H.Yaguchi 等人：“使用硅渗流池通过分子束外延生长的 SiGe 应变异质结构的表征”固体薄膜。

Y.Hayashi,et al.: "A new growth method of epitaxial cobalt disilicide on Si(100)" Mat.Res.Soc.Symp.Proc.663-668 (1998)

Y.Hayashi 等人：“Si(100) 上外延二硅化钴的新生长方法”Mat.Res.Soc.Symp.Proc.663-668 (1998)

A.Tachibana,et al.: "Quantum Chemical Study on the Oxidation of Hydrogen-Terminated Silicon Surface by Oxygen Anions" Jpn J.Appl.Phys.37. 4493-4505 (1998)

A.Tachibana 等人：“氧阴离子对氢封端硅表面氧化的量子化学研究”Jpn J.Appl.Phys.37。

H.Nakashima, K.Furukawa, Y.C.Liu, D.W.Gao, Y.Kashiwazaki, K.Muraoka, K.Shibata,and T.Tsurushima: "Low-Temperature Deposition of High Quality Silicon Dioxide Films by Sputtering-type Electron Cyclotron Resonance Plasma" J.Vac.Sci.Technol.A. 15. 1951-1954 (

H.Nakashima、K.Furukawa、Y.C.Liu、D.W.Gao、Y.Kashiwazaki、K.Muraoka、K.Shibata 和 T.Tsurushima：“利用溅射型电子回旋共振等离子体低温沉积高质量二氧化硅薄膜”