Ultimate Materials and Processes for Integrated Intelligent System

（1）世界上质量最好的SiGe材料是由气体源MBE技术制造的，而这些技术是从根本上引入的。基于具有高排放效率和良好控制的量子点的SiGe异源连接点，该技术在2000年和1700年为房间温度提供了电子和空穴流动性，适当地。这些结果允许我们给SiGe FET制造一个前景。（2）在900 ° C左右的示范粗糙度下生长氢终结硅的氧化物（100）。更进一步，它发现了一种在氧化时间内改变的粗糙度的周期性变化，以及这一相应地导致表面状态密度分布的周期性变化。在激动人心的氧活性物种的情况下，原子控制的超薄硅氧化物在26纳米的高温下生长，温度为300-500℃。然后我们找到了一个新的行星化模型 ... More 在活性物种的反应是自我有限的。（3）“Defect-active Processing”was proposed and confirmed。这种利用是原子在诱导非equilibrium点变形的过程中产生的重新平衡效应，引入到晶体中，从而导致无缺陷晶体化。（4）接触孔，具有0.15微米的直径和15个方面比，没有经过微加载，直到70纳米，使用替代氟碳气体。Conversion of higher order fluorocar？radicals to lower ones at higher temperature inner wall was also found。Native oxide grown on the hole bottom Si surface Si was removed successfully by hot NFイD23イイD2/HNイD23イD2 mixture。（5）插入一个SiGe层到一个Ti/Si接口减少了接触抵抗，以两个顺序低值为两个n和p类型。（6）一种允许我们通过有机薄膜层传送光学信息的新型装置，该光学信息将被用于磁性半导体和电气行为信息通过极化的磁半导体的自旋信息。（7）一个支持我们的分子设计系统，使我们能够设计在一个分子级开发的设备制造过程，并且这种应用成功地成功地实现了各种过程的动态行为。Furthermore，一种理论方法，基于量子化学led系统地依赖SiH-D24-D2在铜CVD的氢化硅表面和元素反应过程中的系统降解。（8）动态阈值MOS （EIB-DTMOS）结构，其中提出了较大的底层污染常数，并在两次时间内证明了与常规FET比较的较大当前驱动能力。Less（低）

(1) Best quality SiGe material in the world was fabricated by a gas-source MBE technology to which substantially precipitation free technology was introduced. Based on the SiGe heterogeneous junction with high emission efficiency and the well-controlled quantum dots which were achieved by this technology provided 2000 and 1700 for electron and hole mobilities at the room temperature, respectively. These results allowed us to give a prospect for the SiGe FET fabrication. (2) Thermally grown oxide of the hydrogen-terminated Si(100) at 900℃ demonstrated roughness of about one atomic step. Furthermore, it was found that the roughness changed periodically with increase in the oxidation time and this corresponded exactly to the periodic variations of the surface state density distribution. In the case of the excited oxygen active species, atomically-controlled ultra-thin Si oxide with thickness of 2 6nm was grown at low temperatures of 300-500℃. Then it was found that a new planarization mec … More hanism in which the reaction of the active species was self-limited. (3) "Defect-active Processing" was proposed and confirmed. This utilizes the rearrangement effect of atoms induced during relaxation process of non-equilibrium point defects introduced to crystals, thereby leading to defect-free crystallization. (4) Contact holes with 0.15μm diameter and aspect ratio of 15 were engraved without microloading till 70nm employing substituting fluorocarbon gases. Conversion of higher order fluorocarbon radicals to lower ones at higher temperature inner wall was also found. Native oxide grown on the hole bottom Si surface Si was removed successfully by hot NFィイD23ィエD2/HNィイD23ィエD2 mixture. (5) Insertion of a SiGe layer into a Ti/Si interface reduced contact resistance to two order lower values for both n and p types. (6) A novel device which consisted of dielectric/magnetic layered films allowed us to transfer optical information detected by a organic film layer to a spin information of the magnetic-semiconductor and electric conduction information via polarixation of a ferroelectric. (7) A molecular design supporting system which enabled us to design the device fabrication process at a molecular level was developed, and this application elucidated successfully dynamic behaviors of various processes. Furthermore, a theoretical method based on a quantum chemistry led to systematic understanding of thermal decomposition of SiHィイD24ィエD2 on the hydrogen-terminated Si surface and elemental reaction process of the Cu CVD. (8) Dynamic Threshold MOS (EIB-DTMOS) structure which had the large substrate biasing constant was proposed and it demonstrated the two times larger current drivability as compared with the conventional FET. Less