Band gap engineering in graphene nanoribbons and their heterostructures

石墨烯纳米带及其异质结构的带隙工程

• 批准号: 432024334
• 负责人: Professor Dr. Axel Enders
• 金额: --
• 依托单位: Department of Chemistry
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2019
• 资助国家: 德国
• 起止时间: 2018-12-31 至 2023-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/432024334?language=en
• 关键词: Band; gap; engineering; graphene; nanoribbons

It is now well-established that an electronic band gap which is typical for a semiconductor can emerge in the gap-less 2D material graphene if it is synthesized in the form of nearly-one-dimensional stripes. Such stripes, commonly called graphene nanoribbons, or GNRs, are particularly amenable to controlled manipulation of their electronic band gap, using their width, edge structure and chemical doping as parameters. The goal of this proposal is to perform a basic scientific study of GNRs and GNR-based semiconductor heterojunctions, which are constructed by appropriate selection of precursors from a family of molecules that is derived by systematic structural modification of the well-known cGNR-forming monomer 6,11- dibromo-1,2,3,4-tetraphenyltriphenylene. One objective to achieve this goal is to determine the dependence of the electronic structure of the GNRs on systematic, atomically precise structural and chemical modification. A second objective is to construct heterojunctions by connecting two types of precursor molecules that are known to form GNRs of distinctly different band gap (type 1 semiconductor junction), or by connecting two types of precursor molecules that form GNRs of similar but staggered gap (type 2 semiconductor junction). A third objective is to perform pioneering experiments that seek to connect GNRs, especially those with chemically modified edges, via metalation to form two-dimensional metal-graphenic hybrid structures. The outcomes of this basic scientific project are a set of design rules for band gap engineered GNR heterojunctions based on the selected family of precursor molecules, which might help enable some new and interesting materials for applications, such as carbon-based nano-electronic devices, and optical materials.

现在已经确定，如果以近一维条纹的形式合成，则半导体典型的电子带隙可以出现在无间隙的2D材料石墨烯中。这种条纹，通常称为石墨烯纳米带或GNR，特别适合于使用其宽度，边缘结构和化学掺杂作为参数来控制其电子带隙的操纵。该提案的目标是对GNR和基于GNR的半导体异质结进行基础科学研究，这些异质结是通过从一系列分子中适当选择前体来构建的，这些分子是通过对众所周知的cGNR形成单体6，11-二溴-1，2，3，4-四苯基苯并菲进行系统的结构修饰而获得的。实现这一目标的一个目的是确定GNRs的电子结构对系统的、原子级精确的结构和化学修饰的依赖性。第二个目的是通过连接已知形成明显不同带隙的GNR的两种类型的前体分子（1型半导体结），或者通过连接形成类似但交错带隙的GNR的两种类型的前体分子（2型半导体结）来构建异质结。第三个目标是进行开拓性的实验，试图通过金属化连接GNRs，特别是那些具有化学修饰边缘的GNRs，以形成二维金属-石墨烯混合结构。这个基础科学项目的成果是一套基于选定的前体分子家族的带隙工程GNR异质结的设计规则，这可能有助于实现一些新的和有趣的材料的应用，如碳基纳米电子器件和光学材料。