Frictional Properties of Micromechatoronics Elements
Frictional Properties of Micromechatoronics Elements
批准号:
05650289
负责人:
YOSHIMURA Noboru
金额:
$1.34万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (C)
财政年份:
1993
资助国家:
日本
项目状态:
已结题
起止时间:
1993 至 1994
中文摘要
硅片因其优异的机械特性,常被用作微型机械。然而,硅在高温下表现出很大的粘附力,因此预测随着温度的升高,微机械的运动将变得更差。因此,有必要了解温度对硅片静摩擦的影响,以及在高温下减小粘附力的必要性。在本研究中,利用毫米级动子在20゚C到200゚C的温度范围内测量了硅片与硅片、SiO_2和Al薄膜的静态摩擦系数,并测量了随着温度的升高,硅片与硅片、SiO_2和Al薄膜的粘附力。13EA03:发现随着温度的升高,硅片与硅片的静态摩擦系数增加。这是由于硅片之间粘附力的增加造成的。然而,如果我们在厚度超过100 nm的硅片表面沉积SiO_2和Al薄膜,摩擦力不随温度变化,并且呈现几乎恒定的小值。
英文摘要
Silicon wafer is often used for a micromachine because of its excellent mechanical characteristics. However, silicon shows a large adhesive force at a high temperature, so it is predicted that a movement of micromachine would get worse with increase of a temperature. Therefore, it is necessary to understand the effect of the temperature on static friction for silicon wafer and it is also necessary to reduce an adhesive force at a high temperature.In the present study, static friction coefficients of silicon wafer against silicon wafer, SiO_2 and Al thin films were measured by using a milimeter sized mover at the temperature from 20゚C to 200゚C.We also measured an adhesive forces of silicon wafer against silicon wafer, SiO_2 and Al thin films with increasing a temperature.13EA03 : It was found that the static friction coefficient of silicon wafer against silicon wafer was increased with the increase of the temperature. This caused by the increase of the adhesive force between silicon wafers. However, if we depositted an SiO_2 and Al thin films on the surface of a silicon wafer with the thickness over 100nm, the frictional force did not vary with the temperature and those showed an almost constant small value.
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鈴木 雅史: "静電駆動型微小ム-バを用いたシリコンウェーハの摩擦計測" 静電気学会講演論文集. 179-180 (1993)
Masashi Suzuki:“使用静电驱动微动装置进行硅晶片的摩擦测量”日本静电学会会议记录 179-180 (1993)。
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通讯作者:
Masafumi Suzuki: "The Measurement of Friction Coefficient Among Silicon Wafer Sio_2and Al Thin Films" 2nd International Conference on Materials Engineering for Resources. 21-22 (1994)
Masafumi Suzuki:“硅片Sio_2和Al薄膜摩擦系数的测量”第二届资源材料工程国际会议。
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Masafumi SUZUKI,Shigeru WATAMABE,Noburo YOSHIMUA and Hiriyuki FUJITA: "The Measurement of Friction Coefficient for Various Thin Films Using Millimeter-size Movers Driven by Electrostatic Froce" Proceedings of the 2nd Internationalll Conference Applied Ele
Masafumi SUZUKI、Shigeru WATAMABE、Noburo YOSHIMUA 和 Hiriyuki FUJITA:“使用静电力驱动的毫米级动子测量各种薄膜的摩擦系数”第二届国际应用电子会议论文集
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渡辺 茂: "シリコンウェーハ間の静摩擦特性に対する温度の影響" 電気学会論文誌A. 114-A. 168-172 (1994)
Shigeru Watanabe:“温度对硅片之间静摩擦特性的影响”日本电气工程师学会会刊 A.114-A(1994 年)。
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Shigeru WATANABE,Masafumi SUZUKI,Noboru YOSHIMUA and Hiriyuki FUJITA: "Effect of Temperature on Static Friction Characteristics for Silicon wafer/Silicon wafer contact" IEE JAPAN. 168-172 (1994)
Shigeru WATANABE、Masafumi SUZUKI、Noboru YOSHIMUA 和 Hiriyuki FUJITA:“温度对硅片/硅片接触静摩擦特性的影响”IEE JAPAN。
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