Frictional Properties of Micromechatoronics Elements

微机电元件的摩擦特性

• 批准号: 05650289
• 负责人: YOSHIMURA Noboru
• 金额: $ 1.34万
• 依托单位: AKITA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650289/
• 关键词: Friction Coefficient; Thin Film; Electrostatic Force; Micromachine; 薄膜材料; 静止摩擦係数

Silicon wafer is often used for a micromachine because of its excellent mechanical characteristics. However, silicon shows a large adhesive force at a high temperature, so it is predicted that a movement of micromachine would get worse with increase of a temperature. Therefore, it is necessary to understand the effect of the temperature on static friction for silicon wafer and it is also necessary to reduce an adhesive force at a high temperature.In the present study, static friction coefficients of silicon wafer against silicon wafer, SiO_2 and Al thin films were measured by using a milimeter sized mover at the temperature from 20ﾟC to 200ﾟC.We also measured an adhesive forces of silicon wafer against silicon wafer, SiO_2 and Al thin films with increasing a temperature.13EA03 : It was found that the static friction coefficient of silicon wafer against silicon wafer was increased with the increase of the temperature. This caused by the increase of the adhesive force between silicon wafers. However, if we depositted an SiO_2 and Al thin films on the surface of a silicon wafer with the thickness over 100nm, the frictional force did not vary with the temperature and those showed an almost constant small value.

硅片由于具有优良的机械特性，常用于微型机械制造。然而，硅在高温下表现出较大的附着力，因此可以预测，随着温度的升高，微机械的运动将会变差。因此，有必要了解温度对硅片静摩擦的影响，也有必要降低高温下的附着力。在20 ~ 200ºC的温度范围内，采用毫米尺寸的移动仪测量了硅片与硅片、SiO_2和Al薄膜之间的静摩擦系数。随着温度的升高，我们还测量了硅片对硅片、SiO_2和Al薄膜的附着力。结果表明，硅片与硅片的静摩擦系数随着温度的升高而增大。这是由于硅片之间的附着力增加所致。而在厚度大于100nm的硅片表面沉积SiO_2和Al薄膜时，摩擦力不随温度的变化而变化，几乎呈恒定的小值。

项目成果

鈴木 雅史: "静電駆動型微小ム-バを用いたシリコンウェーハの摩擦計測" 静電気学会講演論文集. 179-180 (1993)

Masashi Suzuki：“使用静电驱动微动装置进行硅晶片的摩擦测量”日本静电学会会议记录 179-180 (1993)。

Masafumi Suzuki: "The Measurement of Friction Coefficient Among Silicon Wafer Sio_2and Al Thin Films" 2nd International Conference on Materials Engineering for Resources. 21-22 (1994)

Masafumi Suzuki：“硅片Sio_2和Al薄膜摩擦系数的测量”第二届资源材料工程国际会议。

Masafumi SUZUKI,Shigeru WATAMABE,Noburo YOSHIMUA and Hiriyuki FUJITA: "The Measurement of Friction Coefficient for Various Thin Films Using Millimeter-size Movers Driven by Electrostatic Froce" Proceedings of the 2nd Internationalll Conference Applied Ele

Masafumi SUZUKI、Shigeru WATAMABE、Noburo YOSHIMUA 和 Hiriyuki FUJITA：“使用静电力驱动的毫米级动子测量各种薄膜的摩擦系数”第二届国际应用电子会议论文集

渡辺 茂: "シリコンウェーハ間の静摩擦特性に対する温度の影響" 電気学会論文誌A. 114-A. 168-172 (1994)

Shigeru Watanabe：“温度对硅片之间静摩擦特性的影响”日本电气工程师学会会刊 A.114-A（1994 年）。

Shigeru WATANABE,Masafumi SUZUKI,Noboru YOSHIMUA and Hiriyuki FUJITA: "Effect of Temperature on Static Friction Characteristics for Silicon wafer/Silicon wafer contact" IEE JAPAN. 168-172 (1994)

Shigeru WATANABE、Masafumi SUZUKI、Noboru YOSHIMUA 和 Hiriyuki FUJITA：“温度对硅片/硅片接触静摩擦特性的影响”IEE JAPAN。