Electrical Properties of Ceramic Thin Film Prepared by Sol-gel Method

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New technologies for preparing various thin films have recently been developed. Among those, the sol-gel method is of particular interest since it can produce super-fine powders with a high degree of surface activation by hydrolysis of metal alkoxides under controlled conditions.This study dealt with ZrO_2, SiO_2, and TiO_2 thin films and the electrical properties (resistivity, dielectric constant) of three thin films prepared by sol-gel method. The following two items were investigated:(1) Electrical properties of ZrO_2 thin film prepared due to the difference of the atmosphere in thermal processing.(2) Thin film properties (SiO_2, TiO_2) when glass was used as substrate.(1) Thermal processing in the atmosphere of O_2 is useful for the decomposition and oxidization of residual polymers.(2) Increasing the thermal processing temperature is reasonable for the increase of the film's resistivity.(3) It is possible to control the thickness of the thin film due to the addition of polymers in the sol.(4) As the combination between thin film and glass substrate is due to the chemical reaction, the stress in the thin film occurs.