層状構造III-VI族化合物半導体超格子に関する基礎研究

层状结构III-VI族化合物半导体超晶格基础研究

• 批准号: 05650292
• 负责人: 山田 明
• 金额: $ 1.47万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 无数据
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-05650292/
• 关键词: GaSe; 擬二次元超格子; 層状半導体; III-VI族化合物半導体

本研究は,層状構造を有するIII-VI族化合物半導体を基板面に対して垂直に成長させ,擬二次元超格子を作製するための基礎技術を確立することを目的に行った.その結果,以下に示す成果が得られた.1.GaSe薄膜の分子線エピタキシャル成長を行い、c軸配向したGaSeを(111)GaAs面上に結晶成長させることに成功した.この場合,GaSeは層が基板に平行に積層した構造をとる.また,フォトルミネッセンス測定を行った結果,バルク膜では発光が観測されたもののエピタキシャル膜では発光が観測されなかった.これは,成長温度が350℃程度と低いために,エピタキシャル膜の膜質が十分でないためと考えられた.そこで基板温度を上げて成長を試みたが,層間の結合が弱いファンデルワールス力のため,高い基板温度において成長膜の再蒸発が起こり,良質の膜を得ることは困難であった.2.エピタキシャル膜の高品質化を図るためには,基板温度の最適化が必要であるとの観点から,GaSeとGaAs基板との間で化学結合が生じると考えられる(001)及び(112)GaAs面上への成長を試みた.その結果,500-540℃の基板温度で良質なGaSe膜をエピタキシャル成長させることに成功した.また,(001)及び(112)GaAs面上へ成長させたGaSe膜のフォトルミネッセンスを測定し,薄膜としては初めて,ドナー・アクセプタ対による発光を観測した.この時,GaSeは基板に対して(001)面上で54.7度,(112)面上で19.5度それぞれ傾いて成長した.これより,GaSeのエピタキシャル成長技術が確立し,また,擬二次元超格子を作製する上での基礎的知見が得られた.

In this study, the surface of the semi-solid substrate of III-VI compounds grows vertically, and the two-dimensional superlattice is used to make sure that the basic technology is effective. The following results show that the results are satisfactory. 1. The growth of molecular line transistors of GaSe thin films and the growth of crystals on the (111n) GaAs plane of thin GaSe thin films have been successful. In order to improve the performance of the substrate, the GaSe substrate is paralleled. In this paper, the results of the measurement, the results of the test, the results of the The growth temperature is very low at 350 ℃, and the temperature of the membrane is very high. The temperature of the substrate is high, and the temperature of the substrate is high. 2. The quality of the film is very high, the temperature of the substrate is very high, and the temperature of the substrate is very high. The temperature of the GaSe GaAs substrate is tested by the combination of chemical analysis and chemical analysis. The growth of the substrate on the GaAs surface is tested. The results showed that the temperature of the substrate was good at 500,540 ℃. The GaSe film was successfully grown and successfully grown. The growth of GASE films on the (001) and (112) GaAs surfaces is sensitive to the determination of the temperature and temperature of the thin films. The temperature of the GaSe substrate is 54.7 degrees and 19.5 degrees above (001) and 19.5 degrees respectively. In recent years, the growth technology of the GaSe system has been established, and the two-dimensional superlattice has been used as a basis for the knowledge of the base of the system.

项目成果

Tamotsu Okamoto: "Polarized Photoluminescence in Vacancy-Ordered Ga_2Se_3" J.Crystal Growth. (in press). (1994)

Tamotsu Okamoto：“空位有序 Ga_2Se_3 中的偏振光致发光”J.Crystal Growth。

Nobuaki Kojima: "Photoinduced Oxidation of Epitaxial Ga_2Se_3 Grown by Molecular Beam Epitaxy" Jpn.J.Appl.Phys.32. L887-L889 (1993)

Nobuaki Kojima：“通过分子束外延生长的外延 Ga_2Se_3 的光致氧化”Jpn.J.Appl.Phys.32。

山田 明: "Ga_2Se_3における空孔の規則配列と光学的異方性" 応用物理. 63. 165-168 (1994)

Akira Yamada：“Ga_2Se_3 中的空位有序排列和光学各向异性”应用物理学 63. 165-168 (1994)。

Akira Yamada: "MBE Growth of Ga_2Se_3 and GaSe and Their Optical Properties" Proc.State-of-the Art Program on Compound Semiconductors XVIII. (in press). (1993)

Akira Yamada：“Ga_2Se_3 和 GaSe 的 MBE 生长及其光学性质”Proc.化合物半导体最先进计划 XVIII。

Tamotsu Okamoto: "Characterization of the Interface between Ga_2Se_3 Epitaxial Layer and (100)GaP Substrate by Transmission Electron Microscopy" Proc.1st International Symposium on Control of Semiconductor Interfaces. (in press). (1993)

Tamotsu Okamoto：“通过透射电子显微镜表征 Ga_2Se_3 外延层和 (100)GaP 衬底之间的界面”Proc.1st 国际半导体界面控制研讨会。