Study on Negative Ion Implantation for the Surface Modification of Polymer Materials without Defects for Bio-compatibilty Control
Study on Negative Ion Implantation for the Surface Modification of Polymer Materials without Defects for Bio-compatibilty Control
批准号:
06452112
负责人:
TSUJI Hiroshi
金额:
$4.74万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995
中文摘要
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英文摘要
1.Development of Negative-Ion Source and Negative-Ion implanter :We developed an intense RF plasma-sputter-type heavy negative-ion source (RFNIS) which can deliver hight-current negative-ion beams in a dc-mode with an intensity of several mA of various elements, such as Carbon, Silicon, Copper, Silver, Fluorine, and Oxygen. Besides, we also developed a medium-current type negative-ion implanter equipped a small-type RFNIS,of which a clean booth makes to implant ions in the clean condition as well as in the real implantation process.2.Development of a Method to Measure Surface Potential of Insulators during Negative-Ion ImplantationWe developed a new method to measure the charging voltage of insulator surface by the analysis of secondary electron energy distribution. It was found that the surface charging potential of negative-ion implanted insulators of polyethylene and polystirene plates was in the range form several to 10 volts negative. Besides, we proposed an electric double layr m … More odel as a low charging mechanism of insulators during negative-ion implantation.3.Investigation of the Contact Angle of Polystirene Surface and Detection of Introduced functional groupsBy the positive argon and oxygen ion implantation, the contact angle against pure water of the implanted polystirene decreased with an increase of the dose. On the contrary, by the carbon negative-ion implantation, the angle increased. a little. It was clear from the results of XPS measurements that several functional groups of C-O,C=0, and O=C-O were introduced in the implanted surface of polystirene. Then these functional groups resulted the decrease of contact angle for argon and oxygen implantation.. But in carbon ion implantation, it is considered that the increase of carbon atom at the surface will be affect to the increase of contact angle of polystirene surface.4.Development of Non-Scattering Implantation Method into PowdersWe clarified the scattering phenomenon of powders during implantation by theoretically and experimentally with a positive ion implantation. On the contrary, even in the negative-ion implantation with an energy of 20 keV,there was no scattering resulted. This shows the negative-ion implantation is non scattering implantation method. Less
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辻 博司: "負重イオンビームの電子離脱断面積と二次電子放出比" アイオニクス. 第20巻. 41-50 (1994)
Hiroshi Tsuji:“负重离子束的电子脱离截面和二次电子发射率” Ionics Vol. 20. 41-50 (1994)
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辻 博司、南雲正二、豊田啓孝、後藤康仁、石川順三: "イオン誘起二次電子分析による負イオン注入時のレジスト膜の帯電測定" 真空. 第38巻第3号. 221-223 (1995)
Hiroshi Tsuji、Shoji Nagumo、Hirotaka Toyota、Yasuhito Goto、Junzo Ishikawa:“使用离子诱导二次电子分析进行负离子注入过程中的抗蚀剂膜的电荷测量”,真空,第 38 卷,第 3 期,第 221-223 期。
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辻 博司、富田哲生、豊田啓孝、後藤康仁、石川順三: "高周波プラズマスパッタ型負重イオン源におけるSF_6ガスからのフッ素負イオン引き出し" 真空. 第38巻. 769 (1995)
Hiroshi Tsuji、Tetsuo Tomita、Hirotaka Toyoda、Yasuhito Goto、Junzo Ishikawa:“在高频等离子体溅射型负重离子源中从 SF_6 气体中提取负氟离子”真空 38. 769 (1995)
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Hiroshi Tsuji: "Negative-ion Production of Gas Material in RF Plasma-Spuytter-Type Heavy Negative-Ion Source" Journal of the Vacuum Society of JApan. Vol.38, No.3. 218-220 (1995)
Hiroshi Tsuji:“射频等离子体喷射器型重负离子源中气体材料的负离子产生”日本真空学会杂志。
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Hiroshi Tsuji: "Negative-Ion Implantation Technique" Nuclear Instruments and Methods in Physics Research B. Vol. B96. 7-12 (1995)
Hiroshi Tsuji:“负离子注入技术”物理研究中的核仪器和方法 B.卷。
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共 72 条
Control of Orientation and Shape of Adult Stem Cell on Base Surface by Negative-Ion Pattern Implantation and Induction of The Differentiation
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批准号:20360018
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.9万
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财政年份:2008
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负责人:TSUJI Hiroshi
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依托单位:
Formation of Bio-interface by Patterned Negative Ion Implantation Treatment
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批准号:14350020
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.47万
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财政年份:2002
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负责人:TSUJI Hiroshi
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依托单位:
A study of the Effects of the Producers' Rice Price Decline to the Increase of the Rice Farms' Size
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批准号:04806031
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.22万
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财政年份:1992
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负责人:TSUJI Hiroshi
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依托单位:
海外基金