A Study on Spin-Polarized Tunneling Phenomena and its Applications.

我们研究了量子隧穿现象，这是发展SP-STM的基础，我们的SP-STM可以在不受针尖影响的情况下观察表面的微观磁性状态。(1)1992年，我们成功地用STM观察到了GaAs样品与Ni尖端之间的自旋极化隧道电流。(2)已经开发的UHV-STM系统，它变得清楚，隧道电流依赖于入射光的极性到GaAs样品和Ni尖的磁化。观察到了光伏效应，并测量了STS，因此我们可以了解这些材料的能带结构和自旋极化。(3)我们也正在开发量子井结构，一种利用FIB和Mott自旋分析仪加工到针尖的技术。

We have studied the quantum tunneling phenomena that are the basic research of developing SP-STM.Our SP-STM can observe micro magnetic states of surfaces without an affection of the tip.(1) We succeeded in observing the spin polarized tunneling current between GaAs sample and Ni tip by STM in 1992.(2) The UHV-STM system has been developed and it becomes clear that the tunneling current depends on the polarity of the incident light to the GaAs sample and the magnetization of the Ni tip. A photovoltaic effect was observed and STS was measured, so we can understand the energy band structure and spin polarization of these materials.(3) We are also developing a quantum well structure, a technology of processing to the tip by FIB and Mott spin analyzer.