Scanning magneto resistance microscopy and its applications
扫描磁阻显微镜及其应用
基本信息
- 批准号:13355018
- 负责人:
- 金额:$ 29.04万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (A)
- 财政年份:2001
- 资助国家:日本
- 起止时间:2001 至 2003
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Scanning Probe Microscopy (SPM) is the one of the key tools for promoting the research field called nano-technology, in which high spatial resolution is required to evaluate characteristics of nano-structures and manipulate each of them. SPM has wide variety of applications associating with different kinds of probe-sample interactions. In this research, we investigated new application of SPM with high functional SPM probes equipped with miniaturized sensors fabricated by mean of Micro-Electro-Mechanical Systems (MEMS) technology and ferromagnetic thin films fabrication techniques.As a first approach to make the high functional SPM probes, we have made a cantilever equipped with a magneto resistance effect sensor element, with which a new SPM system is established to detect leakage magnetic fields quantitatively. The SPM system we fabricated has a potential to detect the magnetic fields with high response time. At the first step, we used anisotropy magneto resistance effect, and a recta … More ngular MR element was fabricated on a SiN thin film cantilever. To deduce the SNR and piezo-effect on the lead electrode on the cantilever, we investigated four point lead electrode configuration. At the second step, we tried to make a spin-valve structured MR element with exchange biasing thin films. Optimum structure and fabrication strategy were investigated and we have succeeded in realization of a MR senior element without external application fields. The characterization of the cantilevers for magnetic filed detection was done by observing garnet thin film surfaces and detecting magnetic files produced by electric current flowing in micro-fabricated electrodes. These our success was based on the findings of optimal thin film fabrication conditions to make a good exchange biasing fields between a antifferromagnetic thin films and ferromagnetic ones without reduction the bias fields by high temperature fabrication processes.And as the second approach, we tried to make a field effect transistor made by a single wallcarbon-nanotube (SWNT) on a SiN thin films cantilever. The miniaturized transistor element is expected to be operated as a high sensitive electric field sensor. And the sensor is also applicable to detect chemical reactions because the SWNT can be decorated several kind of molecules. We have investigated the potential application of a probe with SWNT and demonstrated one of them to detect antigenantibody reactions. Less
扫描探针显微镜(SPM)是推动纳米技术研究领域的关键工具之一,该领域需要高空间分辨率来评估纳米结构的特性并对其进行操作。SPM具有与不同类型的探针-样本相互作用相关联的各种各样的应用。在本研究中,我们研究了SPM的新应用,即利用微机电系统(MEMS)技术和铁磁薄膜制造技术制造高功能SPM探针,并配备小型化传感器。作为制造高功能SPM探针的第一步,我们制作了一个带有磁阻效应传感器元件的悬臂梁,并利用该元件建立了一个新的SPM系统来定量检测漏磁场。我们制作的SPM系统具有探测高响应时间磁场的潜力。首先,我们利用各向异性磁阻效应,在SiN薄膜悬臂梁上制作了矩形磁阻元件。为了推导悬臂梁上铅电极的信噪比和压电效应,我们研究了四点铅电极的配置。第二步,我们尝试制作带有交换偏置薄膜的自旋阀结构MR元件。通过对结构优化和制作策略的研究,成功实现了一种无外用领域的磁流变高级元件。通过观察石榴石薄膜表面和检测电流在微加工电极中产生的磁锉,对用于磁场检测的悬臂梁进行了表征。我们的成功是基于最佳薄膜制造条件的发现,在不减少偏置场的情况下,在反铁磁薄膜和铁磁薄膜之间产生良好的交换偏置场。作为第二种方法,我们尝试在SiN薄膜悬臂上用单壁碳纳米管(SWNT)制造场效应晶体管。小型化的晶体管元件有望用作高灵敏度的电场传感器。由于该传感器可以修饰多种分子,因此也适用于化学反应的检测。我们已经研究了SWNT探针的潜在应用,并演示了其中一种探针用于检测抗原抗体反应。少
项目成果
期刊论文数量(10)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y.Yamada, M.Nakamura, K.Sueoka, K.Mukasa: "SP-SEM Observation of Magnetic Vortex States in Permalloy Disks"Trans.Magn.Soc.Japan. 3. 26-29 (2003)
Y.Yamada、M.Nakamura、K.Sueoka、K.Mukasa:“坡莫合金盘中磁涡状态的 SP-SEM 观察”Trans.Magn.Soc.Japan。
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- 影响因子:0
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M.Nakamura, T.Takezaki, K.Sueoka, K.Mukasa: "Magnetic Field Imaging by Scanning Magnetoroesistance Microscope with MR Cantilever"Trans.Magn.Soc.Japan. 3. 43-46 (2003)
M.Nakamura、T.Takezaki、K.Sueoka、K.Mukasa:“使用 MR 悬臂梁扫描磁阻显微镜进行磁场成像”Trans.Magn.Soc.Japan。
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- 影响因子:0
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M.Nakamura, M.Kimura, K.Sueoka, K.Mukasa: "Scanning magnetoresistance microscopy with a magnetoresistive sensor cantilever"Appl.Phys.Lett. 80. 2713-2715 (2002)
M.Nakamura、M.Kimura、K.Sueoka、K.Mukasa:“使用磁阻传感器悬臂梁扫描磁阻显微镜”Appl.Phys.Lett。
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- 影响因子:0
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M.Nakamura, K.Sueoka, K.Mukasa: "Improvement of the MR Cantilever for Scanning Magnetoresistance Microscope"Trans.Magn.Soc.Japan. 2. 7-10 (2002)
M.Nakamura、K.Sueoka、K.Mukasa:“扫描磁阻显微镜 MR 悬臂的改进”Trans.Magn.Soc.Japan。
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- 发表时间:
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- 影响因子:0
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M.Nakamura, T.Takezaki, K.Sueoka, K.Mukasa: "Magnetic Field Imaging by Scanning Magnetoresistance Microscope with MR Cantilever"Trans.Magn.Soc.Japan. 3. 43-46 (2003)
M.Nakamura、T.Takezaki、K.Sueoka、K.Mukasa:“使用 MR 悬臂梁扫描磁阻显微镜进行磁场成像”Trans.Magn.Soc.Japan。
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- 影响因子:0
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MUKASA Koichi其他文献
MUKASA Koichi的其他文献
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{{ truncateString('MUKASA Koichi', 18)}}的其他基金
Atomic resolved imaging of exchange force interaction force by magnetic resonance scanning force microscopy
磁共振扫描力显微镜交换力相互作用力的原子分辨成像
- 批准号:
15310080 - 财政年份:2003
- 资助金额:
$ 29.04万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
The Development of Spin-Polarized STM with Atomic Resolution
原子分辨率自旋偏振STM的发展
- 批准号:
06555007 - 财政年份:1994
- 资助金额:
$ 29.04万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
A Study on Spin-Polarized Tunneling Phenomena and its Applications.
自旋极化隧道现象及其应用的研究。
- 批准号:
06452116 - 财政年份:1994
- 资助金额:
$ 29.04万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Research of Monolayer/Metal Interface by Inelastic Electron Tunneling Spectroscopy (IETS)
非弹性电子隧道光谱(IETS)研究单层/金属界面
- 批准号:
02452141 - 财政年份:1990
- 资助金额:
$ 29.04万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)