Scanning magneto resistance microscopy and its applications
Scanning magneto resistance microscopy and its applications
批准号:
13355018
负责人:
MUKASA Koichi
金额:
$29.04万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2003
中文摘要
扫描探针显微镜(SPM)是促进纳米技术这一研究领域的关键工具之一,它需要高空间分辨率来评估纳米结构的特征并对其进行操作。SPM具有广泛的应用,与不同类型的探针-样品相互作用有关。本研究利用微电子机械系统(MEMS)技术和铁磁薄膜制作技术,研制了带有微型化传感器的高性能扫描隧道显微镜(SPM)探头,并首次研制出带有磁阻效应传感元件的悬臂梁结构,建立了一种新型的SPM漏磁场定量检测系统。我们制作的扫描探针显微镜系统具有检测高响应时间磁场的潜力。在第一步中,我们利用了各向异性磁阻效应和矩形…在氮化硅薄膜悬臂梁上制作了更多形状的磁流变元件。为了减小悬臂梁上引线电极的信噪比和压电性,我们研究了四点引线电极的结构。在第二步中,我们尝试用交换偏置薄膜制作自旋阀结构的磁流变元件。研究了优化的结构和制作策略,并成功地实现了一种无外场的磁流变高级元件。通过观察石榴石薄膜表面和检测电流在微制造电极中产生的磁性文件,对磁场检测用悬臂梁进行了表征。我们的成功是基于最佳的薄膜制备条件的发现,在不降低高温制备过程中的偏置场的情况下,使反铁磁薄膜和铁磁性薄膜之间有良好的交换偏置场。作为第二种方法,我们尝试在SiN薄膜悬臂梁上制作由单壁碳纳米管(SWNT)制成的场效应晶体管。这种小型化的晶体管元件有望作为高灵敏度的电场传感器运行。该传感器还适用于化学反应的检测,因为碳纳米管可以修饰多种分子。我们已经研究了一种带有SWNT的探针的潜在应用,并展示了其中一种用于检测抗原抗体反应的探针。较少
英文摘要
Scanning Probe Microscopy (SPM) is the one of the key tools for promoting the research field called nano-technology, in which high spatial resolution is required to evaluate characteristics of nano-structures and manipulate each of them. SPM has wide variety of applications associating with different kinds of probe-sample interactions. In this research, we investigated new application of SPM with high functional SPM probes equipped with miniaturized sensors fabricated by mean of Micro-Electro-Mechanical Systems (MEMS) technology and ferromagnetic thin films fabrication techniques.As a first approach to make the high functional SPM probes, we have made a cantilever equipped with a magneto resistance effect sensor element, with which a new SPM system is established to detect leakage magnetic fields quantitatively. The SPM system we fabricated has a potential to detect the magnetic fields with high response time. At the first step, we used anisotropy magneto resistance effect, and a recta … More ngular MR element was fabricated on a SiN thin film cantilever. To deduce the SNR and piezo-effect on the lead electrode on the cantilever, we investigated four point lead electrode configuration. At the second step, we tried to make a spin-valve structured MR element with exchange biasing thin films. Optimum structure and fabrication strategy were investigated and we have succeeded in realization of a MR senior element without external application fields. The characterization of the cantilevers for magnetic filed detection was done by observing garnet thin film surfaces and detecting magnetic files produced by electric current flowing in micro-fabricated electrodes. These our success was based on the findings of optimal thin film fabrication conditions to make a good exchange biasing fields between a antifferromagnetic thin films and ferromagnetic ones without reduction the bias fields by high temperature fabrication processes.And as the second approach, we tried to make a field effect transistor made by a single wallcarbon-nanotube (SWNT) on a SiN thin films cantilever. The miniaturized transistor element is expected to be operated as a high sensitive electric field sensor. And the sensor is also applicable to detect chemical reactions because the SWNT can be decorated several kind of molecules. We have investigated the potential application of a probe with SWNT and demonstrated one of them to detect antigenantibody reactions. Less
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Y.Yamada, M.Nakamura, K.Sueoka, K.Mukasa: "SP-SEM Observation of Magnetic Vortex States in Permalloy Disks"Trans.Magn.Soc.Japan. 3. 26-29 (2003)
Y.Yamada、M.Nakamura、K.Sueoka、K.Mukasa:“坡莫合金盘中磁涡状态的 SP-SEM 观察”Trans.Magn.Soc.Japan。
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M.Nakamura, T.Takezaki, K.Sueoka, K.Mukasa: "Magnetic Field Imaging by Scanning Magnetoroesistance Microscope with MR Cantilever"Trans.Magn.Soc.Japan. 3. 43-46 (2003)
M.Nakamura、T.Takezaki、K.Sueoka、K.Mukasa:“使用 MR 悬臂梁扫描磁阻显微镜进行磁场成像”Trans.Magn.Soc.Japan。
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M.Nakamura, M.Kimura, K.Sueoka, K.Mukasa: "Scanning magnetoresistance microscopy with a magnetoresistive sensor cantilever"Appl.Phys.Lett. 80. 2713-2715 (2002)
M.Nakamura、M.Kimura、K.Sueoka、K.Mukasa:“使用磁阻传感器悬臂梁扫描磁阻显微镜”Appl.Phys.Lett。
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M.Nakamura, K.Sueoka, K.Mukasa: "Improvement of the MR Cantilever for Scanning Magnetoresistance Microscope"Trans.Magn.Soc.Japan. 2. 7-10 (2002)
M.Nakamura、K.Sueoka、K.Mukasa:“扫描磁阻显微镜 MR 悬臂的改进”Trans.Magn.Soc.Japan。
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M.Nakamura, T.Takezaki, K.Sueoka, K.Mukasa: "Magnetic Field Imaging by Scanning Magnetoresistance Microscope with MR Cantilever"Trans.Magn.Soc.Japan. 3. 43-46 (2003)
M.Nakamura、T.Takezaki、K.Sueoka、K.Mukasa:“使用 MR 悬臂梁扫描磁阻显微镜进行磁场成像”Trans.Magn.Soc.Japan。
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共 7 条
Atomic resolved imaging of exchange force interaction force by magnetic resonance scanning force microscopy
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批准号:15310080
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.24万
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财政年份:2003
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负责人:MUKASA Koichi
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依托单位:
The Development of Spin-Polarized STM with Atomic Resolution
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批准号:06555007
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$5.63万
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财政年份:1994
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负责人:MUKASA Koichi
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依托单位:
A Study on Spin-Polarized Tunneling Phenomena and its Applications.
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批准号:06452116
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.42万
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财政年份:1994
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负责人:MUKASA Koichi
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依托单位:
Research of Monolayer/Metal Interface by Inelastic Electron Tunneling Spectroscopy (IETS)
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批准号:02452141
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.2万
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财政年份:1990
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负责人:MUKASA Koichi
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依托单位: