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Development of high-performance Schottky diode detector in the submillimeter wave region

亚毫米波区高性能肖特基二极管检波器的研制

基本信息

批准号：
06452236
负责人：
NOZOKIDO Tatsuo
金额：
$ 4.35万
依托单位：
The Institute of Physical and Chemical Research (RIKEN)
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1994
资助国家：
日本
起止时间：
1994 至 1995
项目状态：
已结题

项目摘要

The aim of the research is to realize a high-performance Pt/GaAs Schottky Diode (SD) detector operated in the submillimeter wave (SMMW) region with characteristics of high-sensitivity and good mechanical stability. The detector consists of reverse honeycomb SD,whisker antenna and RF microstrip filter which are fabricated using photolithographic technique. Concerning a fabrication process of reverse honeycomb SD,we have successfully developed an ECR plasma anisotropic etching technique to make a dot-matrix pattern (diameter : 0.17mum, pitch : 0.5mum) on SiO_2 with thickness of 4000A without damaging the underlying GaAs epi-layr. This is essential to obtain low-noise SD and the technique would also be applicable to fabrication processes for other semiconductor devices. We also made the whisker antenna and RF microstrip filter and have verified their dimensions as designed. We plan to complete the reverse honeycomb SD,make the detector mount, assemble these components and then measure the detector characteristics.For the testing and characterization of the detector we have succeeded in developing an optically pumped SMMW laser with highly stable output power and a diplexer with propagation loss of 0.2dB.In the course of the development we have discovered a new lasing line (wavelength : 746.4mum) when using CH_2F_2 gas as a lasing media. We further tried to modulate the SMMW radiation by laser-produced free carriers in semiconductors. Modulation of 214.6mum radiation was carried out by irradiating high-resistivity silicon or GaAs wafers with optical pulses from a Nd : YAG laser. We have achieved SMMW switching with rise time of 6nsec and generation of SMMW short pulses with duration of 10nsec. This optical switching technique is very useful for measuring the speed of SMMW detectors and could be applied to fields like molecular spectroscopy and solid-state physics.

本研究的目的是实现一种高性能的Pt/GaAs肖特基二极管（SD）探测器，该探测器工作在亚毫米波（SMMW）区域，具有高灵敏度和良好的机械稳定性。该探测器由反向蜂窝SD、晶须天线和RF微带滤波器组成，它们均采用MEMS工艺制作而成。针对反向蜂窝SD的制作工艺，我们成功地开发了ECR等离子体各向异性刻蚀技术，在不损伤底层GaAs外延层的情况下，在SiO_2上制作了厚度为4000 A的点阵图形（直径为0.17 μ m，间距为0.5 μ m）。这对于获得低噪声SD是必不可少的，并且该技术也适用于其他半导体器件的制造工艺。制作了触须天线和微带滤波器，并验证了其尺寸与设计相符。我们计划完成反向蜂窝SD、探测器的安装、组装和探测器特性的测试。为了测试和表征探测器，我们成功地研制了输出功率稳定的光泵SMMW激光器和传输损耗为0.2dB的双工器。在研制过程中，我们发现了一条新的激光线（波长：746.4 μ m）。我们进一步尝试通过激光在半导体中产生的自由载流子来调制SMMW辐射。调制214.6 μ m的辐射进行照射高电阻率的硅或GaAs晶片的光脉冲从Nd：YAG激光器。我们已经实现了上升时间为6 nsec的SMMW开关和持续时间为10 nsec的SMMW短脉冲的产生。这种光开关技术对于测量SMMW探测器的速度非常有用，并且可以应用于分子光谱学和固体物理学等领域。