Highly Efficient Hydrogen Formation using Photoexcited Semiconductro Surface
Highly Efficient Hydrogen Formation using Photoexcited Semiconductro Surface
批准号:
06453200
负责人:
FUJISHIMA Akira
金额:
$5.31万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995
中文摘要
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英文摘要
Solar energy is a very useful energy, and it is used as a source of light and heat, or it is transformed into chemical energy, electric energy and so on. For an energy conversion of light energy, photosynthesis is representive. In natrure, plants can store solar energy in themselves by way of photosynthesis reaction. We have been interested in light-related chemical phenomena. Utilization of light energy to induce chemical reactions is our main concern. The photoelectrochemical approaches are actively pursued for the production of hydrogen, a clean energy source by an artificial photosynthesis system.As the artificial system, we proposed a semiconductor electrode system. The point is that there exists an interface between solid layr of photo-reactive semiconductor and water and photo-induced reaction occurs at the interface. When a semiconductor electrode is in contact with an electrolyte solution, a space charge layr within a thin semiconductor surface region is formed. Then, this electrode receives photons with energy greater than its band gap E_g, electron-hole pairs are generated within the space charge layr.The generated carriers are concerned in the hydrogen or oxygen evolution on the electrode surface depending on types of semiconductor.The possibility of solar photoelectrolysis was demonstrated by us for the first time with a system in which an n-type titanium dioxide (TiO_2) electrode was connected to a platinum black electrode, the former exposed to near-uv light. This research project has achieved to form hydrogen efficiently by using P-type semiconducting diamond electrode under uv light.
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K.Kawasaki: "Imaging fo One-Dimensionla Conducting Pt Complexes Using Atomic Force Microscopy" Chem.Lett.879-880 (1995)
K.Kawasaki:“使用原子力显微镜对一维导电 Pt 配合物进行成像”Chem.Lett.879-880 (1995)
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T.Nakashima and A.Fujishima etc.: "Adsorption of Anionic and Cationic Dyes in Dilute Solutions onto a Sn O2 Surface Measured by Total Internal Reflection Fluorescence" Ber.Bunsenges.Phys.Chem.99(4). 609-616 (1995)
T.Nakashima 和 A.Fujishima 等:“通过全内反射荧光测量稀溶液中阴离子和阳离子染料在 Sn O2 表面上的吸附”Ber.Bunsenges.Phys.Chem.99(4)。
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T.Kato and A.Fujishima etc.: "Photoelectrochemical Reduction of Tetrazolium Salts to Formazans on Surfaces of Semiconductor Powders in Alcohol Solutions" Spectroscopy Letters.28(6). 849-859 (1995)
T.Kato和A.Fujishima等:“在酒精溶液中半导体粉末表面光电化学还原四唑盐为甲臜”光谱快报.28(6)。
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H.Matsubara and A.Fujishima etc.: "Photoactive TiO2 Containing Paper: Preparation and Its Photocatalytic Activity under Weak UV Light Illumination" Chemistry Letters. 767-768 (1995)
H.Matsubara和A.Fujishima等:“含光活性TiO2的纸:制备及其在弱紫外光照射下的光催化活性”化学快报。
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H.Sakai: "Local Detection of Photoelectrochemically Produeed HeO_2 with a “Wired" Horseradish Peroxidase Microsensor" J. Phys. Chem.99. 11869-11900 (1995)
H. Sakai:“使用“有线”辣根过氧化物酶微传感器对光电化学产生的 HeO_2 进行局部检测”J. Phys. 11869-11900 (1995)。
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共 36 条
Photocatalytic coating on the lacquer utilized for cultural assets such as the shrines and temples of Nikko
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批准号:16H03107
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.23万
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财政年份:2016
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负责人:FUJISHIMA Akira
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Application for environmental purification by multi-channel TiO2-based photocatalytic nanotubes
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项目类别:Grant-in-Aid for Scientific Research (B)
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财政年份:2011
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负责人:FUJISHIMA Akira
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Development of new printing method using photocatalysis
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批准号:21654043
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.16万
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财政年份:2009
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负责人:FUJISHIMA Akira
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依托单位:
Fabrication of photo-functional materials based on TiO2 nanofiber composites
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批准号:20350090
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.98万
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财政年份:2008
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负责人:FUJISHIMA Akira
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依托单位:
Highly Efficiency Solar Energy Conversion Using Photointerface System
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批准号:14050023
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$97.22万
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财政年份:2002
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负责人:FUJISHIMA Akira
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依托单位:
Fundamental Science and Technology of Photofunctional Interfaces
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批准号:13050101
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$65.22万
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财政年份:2001
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负责人:FUJISHIMA Akira
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依托单位:
Assembly of the photocatalytic membrane having mesoscopic structure
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批准号:12555184
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.51万
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财政年份:2000
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负责人:FUJISHIMA Akira
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依托单位:
New Trend in Photoelectrochemistry using Conductive Diamond Film
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批准号:11694133
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$4.61万
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财政年份:1999
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负责人:FUJISHIMA Akira
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依托单位:
Photoelectrochemical Reduction of CD_2 using Diamond Electrode
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批准号:10480142
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$8.83万
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财政年份:1998
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负责人:FUJISHIMA Akira
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依托单位:
Fundamentals of TiOィイD22ィエD2 photocatalysis for environmental purification
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批准号:09555268
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.96万
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财政年份:1997
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负责人:FUJISHIMA Akira
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依托单位:
Photoelectrochemical Reactions at Semiconductor Diamond Films
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批准号:08455392
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.99万
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财政年份:1996
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负责人:FUJISHIMA Akira
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依托单位:
Development of Novel functionalities in Some Photoelectrochromic Materials and their Application to a Display Device
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批准号:04505004
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项目类别:Grant-in-Aid for Developmental Scientific Research (A)
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资助金额:$23.04万
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财政年份:1992
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负责人:FUJISHIMA Akira
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依托单位:
High Density Memory System Using Organic Thin Film
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批准号:04453076
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$5.18万
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财政年份:1992
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负责人:FUJISHIMA Akira
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依托单位:
Optoelectronic Materials Based on Physical Chemistry
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批准号:03303008
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项目类别:Grant-in-Aid for Co-operative Research (A)
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资助金额:$5.95万
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财政年份:1991
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负责人:FUJISHIMA Akira
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依托单位:
Photoelectrochemistry Using Semiconductor Electrodes Modified Chemically with Redox Enzymes
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批准号:03044046
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项目类别:Grant-in-Aid for international Scientific Research
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资助金额:$4.16万
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财政年份:1991
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负责人:FUJISHIMA Akira
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依托单位:
Redox Reactions and Pattern Formation by Using Photoexcited Semiconductor-Electrolyte Interfaces
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批准号:01850182
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$7.36万
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财政年份:1989
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负责人:FUJISHIMA Akira
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依托单位:
Investigation of Electron-Transfer Process on Photoexcited Heterogeneous Interface and Its New Application
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批准号:63470064
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.97万
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财政年份:1988
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负责人:FUJISHIMA Akira
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依托单位:
Investigation of Photo-degradation mechanism of semiconductor-organic material interface
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批准号:61850146
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项目类别:Grant-in-Aid for Developmental Scientific Research
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资助金额:$5.95万
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财政年份:1986
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负责人:FUJISHIMA Akira
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依托单位:
Efficient conversiton of light energy by using funational semiconductor surfaces
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批准号:60470078
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.14万
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财政年份:1985
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负责人:FUJISHIMA Akira
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依托单位: