Efficient conversiton of light energy by using funational semiconductor surfaces
Efficient conversiton of light energy by using funational semiconductor surfaces
批准号:
60470078
负责人:
FUJISHIMA Akira
金额:
$3.14万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1985
资助国家:
日本
项目状态:
已结题
起止时间:
1985 至 1987
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Lihhy rnergy conversion systems based on the semiconductor liquid junctions have been focusing on fuel production as well as electrical energy generation.When a semiconductor electrode receives photons with energy greater than its band gap, electron-hole pairs are generated within a space charge layer. In the case of an n-type semiconductor, electric field existing within the space charge layer drives photo- generated holes toward the interfacial region and electrons toward the interior of the electrode. Thus, by combining a semiconductor electrode with an appropriate counter-electrode, a photo-cell can be constructed.The possibiliy of solar photoelectrolysis of water was demonstrated by us for the first time with a system in which an n-type titanium dioxide electrode was connected to a platinum black electorde, construction of an efficient photoelectrochemical cell in which water is decomposed to H2 and O2, as well as for the construction of an efficient regenerative photovoltaic cell in which a common redox couple is reacting at both the photoanode and the metal cathode.Following three subjects have been studiel.1) Increase of conversion efficiency by using semiconductor surfaces loaded with catalytic metals2) determination of reaction sites of photocatalytic semiconductor surfaces by separation factor method3) surface modification of semiconductor surface with chemical modification and polymer coating.
期刊论文(50)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
K. Itoh, Y. Nakajima, A. Fujishima: "Hole Transfer Rates at Illuminated <alpha>Fe2O3 Electrodes. Rate Declining in Highly Exothermic Reaction and Hole Transfer Via Surface States" Chemistry Letters. 2125-2128 (1987)
K. Itoh、Y. Nakajima、A. Fujishima:“照明 <α>Fe2O3 电极的空穴转移速率。高放热反应中的速率下降和通过表面态的空穴转移”化学快报。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
R. Baba, S. Nakabayashi, A. Fujishima, K. HOnda: "Photocatalytic Hydrogenation of Ethylene on the Bimetal-Deposited Semiconductor Powders" J. Amr. Chem. Soc.109. 2273-2277 (1987)
R. Baba、S. Nakabayashi、A. Fujishima、K. Honda:“双金属沉积半导体粉末上乙烯的光催化氢化”J. Amr。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
M.Okano: J.Electroanal.Chem.185. 393-396 (1985)
M.Okano:J.Electroanal.Chem.185。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 25 条
Photocatalytic coating on the lacquer utilized for cultural assets such as the shrines and temples of Nikko
-
批准号:16H03107
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.23万
-
财政年份:2016
-
负责人:FUJISHIMA Akira
-
依托单位:
Application for environmental purification by multi-channel TiO2-based photocatalytic nanotubes
-
批准号:23350093
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.73万
-
财政年份:2011
-
负责人:FUJISHIMA Akira
-
依托单位:
Development of new printing method using photocatalysis
-
批准号:21654043
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.16万
-
财政年份:2009
-
负责人:FUJISHIMA Akira
-
依托单位:
Fabrication of photo-functional materials based on TiO2 nanofiber composites
-
批准号:20350090
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.98万
-
财政年份:2008
-
负责人:FUJISHIMA Akira
-
依托单位:
Highly Efficiency Solar Energy Conversion Using Photointerface System
-
批准号:14050023
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$97.22万
-
财政年份:2002
-
负责人:FUJISHIMA Akira
-
依托单位:
Fundamental Science and Technology of Photofunctional Interfaces
-
批准号:13050101
-
项目类别:Grant-in-Aid for Scientific Research on Priority Areas
-
资助金额:$65.22万
-
财政年份:2001
-
负责人:FUJISHIMA Akira
-
依托单位:
Assembly of the photocatalytic membrane having mesoscopic structure
-
批准号:12555184
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.51万
-
财政年份:2000
-
负责人:FUJISHIMA Akira
-
依托单位:
New Trend in Photoelectrochemistry using Conductive Diamond Film
-
批准号:11694133
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$4.61万
-
财政年份:1999
-
负责人:FUJISHIMA Akira
-
依托单位:
Photoelectrochemical Reduction of CD_2 using Diamond Electrode
-
批准号:10480142
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$8.83万
-
财政年份:1998
-
负责人:FUJISHIMA Akira
-
依托单位:
Fundamentals of TiOィイD22ィエD2 photocatalysis for environmental purification
-
批准号:09555268
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.96万
-
财政年份:1997
-
负责人:FUJISHIMA Akira
-
依托单位:
Photoelectrochemical Reactions at Semiconductor Diamond Films
-
批准号:08455392
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.99万
-
财政年份:1996
-
负责人:FUJISHIMA Akira
-
依托单位:
Highly Efficient Hydrogen Formation using Photoexcited Semiconductro Surface
-
批准号:06453200
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$5.31万
-
财政年份:1994
-
负责人:FUJISHIMA Akira
-
依托单位:
Development of Novel functionalities in Some Photoelectrochromic Materials and their Application to a Display Device
-
批准号:04505004
-
项目类别:Grant-in-Aid for Developmental Scientific Research (A)
-
资助金额:$23.04万
-
财政年份:1992
-
负责人:FUJISHIMA Akira
-
依托单位:
High Density Memory System Using Organic Thin Film
-
批准号:04453076
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$5.18万
-
财政年份:1992
-
负责人:FUJISHIMA Akira
-
依托单位:
Optoelectronic Materials Based on Physical Chemistry
-
批准号:03303008
-
项目类别:Grant-in-Aid for Co-operative Research (A)
-
资助金额:$5.95万
-
财政年份:1991
-
负责人:FUJISHIMA Akira
-
依托单位:
Photoelectrochemistry Using Semiconductor Electrodes Modified Chemically with Redox Enzymes
-
批准号:03044046
-
项目类别:Grant-in-Aid for international Scientific Research
-
资助金额:$4.16万
-
财政年份:1991
-
负责人:FUJISHIMA Akira
-
依托单位:
Redox Reactions and Pattern Formation by Using Photoexcited Semiconductor-Electrolyte Interfaces
-
批准号:01850182
-
项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$7.36万
-
财政年份:1989
-
负责人:FUJISHIMA Akira
-
依托单位:
Investigation of Electron-Transfer Process on Photoexcited Heterogeneous Interface and Its New Application
-
批准号:63470064
-
项目类别:Grant-in-Aid for General Scientific Research (B)
-
资助金额:$3.97万
-
财政年份:1988
-
负责人:FUJISHIMA Akira
-
依托单位:
Investigation of Photo-degradation mechanism of semiconductor-organic material interface
-
批准号:61850146
-
项目类别:Grant-in-Aid for Developmental Scientific Research
-
资助金额:$5.95万
-
财政年份:1986
-
负责人:FUJISHIMA Akira
-
依托单位:
海外基金