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Efficient conversiton of light energy by using funational semiconductor surfaces

Efficient conversiton of light energy by using funational semiconductor surfaces
利用功能半导体表面高效转换光能
批准号:
60470078
负责人:
FUJISHIMA Akira
金额:
$3.14万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for General Scientific Research (B)
财政年份:
1985
资助国家:
日本
项目状态:
已结题
起止时间:
1985 至 1987

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中文摘要
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英文摘要
Lihhy rnergy conversion systems based on the semiconductor liquid junctions have been focusing on fuel production as well as electrical energy generation.When a semiconductor electrode receives photons with energy greater than its band gap, electron-hole pairs are generated within a space charge layer. In the case of an n-type semiconductor, electric field existing within the space charge layer drives photo- generated holes toward the interfacial region and electrons toward the interior of the electrode. Thus, by combining a semiconductor electrode with an appropriate counter-electrode, a photo-cell can be constructed.The possibiliy of solar photoelectrolysis of water was demonstrated by us for the first time with a system in which an n-type titanium dioxide electrode was connected to a platinum black electorde, construction of an efficient photoelectrochemical cell in which water is decomposed to H2 and O2, as well as for the construction of an efficient regenerative photovoltaic cell in which a common redox couple is reacting at both the photoanode and the metal cathode.Following three subjects have been studiel.1) Increase of conversion efficiency by using semiconductor surfaces loaded with catalytic metals2) determination of reaction sites of photocatalytic semiconductor surfaces by separation factor method3) surface modification of semiconductor surface with chemical modification and polymer coating.
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K. Itoh, Y. Nakajima, A. Fujishima: "Hole Transfer Rates at Illuminated <alpha>Fe2O3 Electrodes. Rate Declining in Highly Exothermic Reaction and Hole Transfer Via Surface States" Chemistry Letters. 2125-2128 (1987)
K. Itoh、Y. Nakajima、A. Fujishima:“照明 <α>Fe2O3 电极的空穴转移速率。高放热反应中的速率下降和通过表面态的空穴转移”化学快报。
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R. Baba, S. Nakabayashi, A. Fujishima, K. HOnda: "Photocatalytic Hydrogenation of Ethylene on the Bimetal-Deposited Semiconductor Powders" J. Amr. Chem. Soc.109. 2273-2277 (1987)
R. Baba、S. Nakabayashi、A. Fujishima、K. Honda:“双金属沉积半导体粉末上乙烯的光催化氢化”J. Amr。
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